快速退火对 Ni-Al-O 栅介质结构和介电性能的影响

doi:10.3724/SP.J.1077.2011.00257

无机材料学报 ›› 2011, Vol. 26 ›› Issue (3): 257-260.DOI: 10.3724/SP.J.1077.2011.00257 CSTR: 32189.14.SP.J.1077.2011.00257

快速退火对 Ni-Al-O 栅介质结构和介电性能的影响

李曼¹, 刘保亭¹, 王玉强², 王宽冒¹

1.河北大学1.物理科学与技术学院,保定071002; 2.河北大学 2. 电子信息工程学院, 保定071002

收稿日期:2010-05-11 修回日期:2010-07-08 出版日期:2011-03-20 网络出版日期:2011-02-18
作者简介:李曼(1986-), 女，河北人 , 硕士研究生.
基金资助:
国家自然科学基金(60876055, 11074063);河北省自然科学基金项目 (E2008000620, E2009000207); 高等学校博士点基金(20091301110002); 河北省应用基础研究计划重点基础研究项目(10963525D)

Effect of RapidThermal Annealing on Structural And and Electrical characteristics Characteristics of Ni-Al-O gate Gate dielectrics Dielectrics

LI Man¹, LIU Bao-ting¹,WANG Yu-qiang²,WANG Kuan-mao¹

1. College of Physics Science and Technology, Hebei University,Baoding 071002, China; 2. College of Electronic and Information Engineering,Hebei University, Baoding 071002, China

Received:2010-05-11 Revised:2010-07-08 Published:2011-03-20 Online:2011-02-18
Supported by:
National Nature Science Foundation of China (60876055 ,11074063) ; Nature Science Foundation of Hebei Province (E2008000620,E2009000207) ;Specialized Research Fund for the Doctoral Program of Higher Education (20091301110002) ; The Key Basic Research Program of Hebei Province Applied Basic Research Plan (10963525D)

摘要/Abstract

摘要： 采用反应脉冲激光沉积方法(PLD)分别在n-Si(100)和Pt/Ti/SiO₂/Si(111)衬底上生长了Ni-Al-O栅介质薄膜,将样品在不同温度下进行快速退火处理. 通过XRD和AFM对其结构和表面形貌进行了表征,利用LCR表和Keithley表对其介电性能和漏电流进行了研究.结果表明, 样品经过750 ℃退火后仍然保持非晶状态,且样品的表面平整, 均方根粗糙度小于0.5nm. 在1 MHz测试频率下, 由Pt/Ni-Al-O/Pt电容器测得的介电常数为9.9.MOS电容器的电学测试显示, 700 ^oC ℃以上退火的样品有较高的电容值,较低的漏电流密度. 研究表明,Ni-Al-O薄膜将会是一种很有潜力的新型高k栅介质材料.

关键词: 高k栅介质, Ni-Al-O薄膜, 反应脉冲激光沉积

Abstract: The high-k Ni-Al-O gatedielectric films , were depositedon Si (100) and platinized Si (111) substrates by reactive pulsed-laserdeposition (PLD) at 400 ^oC ℃, were and the nannealed in a rapid thermal annealing furnace at various temperatures rangingfrom 600 ℃ ^oC to 750 ℃ ^oC. The structural and electrical properties of the Ni-Al-O films were investigated. It is found that Ni-Al-O thin film annealed up to 750 ℃ ^oC is amorphous and the root-mean-square roughness of the film is less than 0.5 nm, indicating the file surface isvery smooth. The dielectric constant of the film measured at the frequency of 1 MHz is determined to be 9.9 at the frequency of 1 MHz measured with Pt/Ni-Al-O/Pt structure. The capacitance and leakage current density of the film, annealed at above 700 ℃ ^oC are 135 pF and 7.0×10^-⁷A /cm^-2,respectively. The obtained results indicate that the amorphous Ni-Al-O film is a promising candidate for high-k gate dielectric.

Key words: high-k gate dielectric, Ni-Al-O thin film, reactive pulsed laser deposition

中图分类号:

O484

李曼, 刘保亭, 王玉强, 王宽冒. 快速退火对 Ni-Al-O 栅介质结构和介电性能的影响[J]. 无机材料学报, 2011, 26(3): 257-260.

LI Man, LIU Bao-ting,WANG Yu-qiang,WANG Kuan-mao. Effect of RapidThermal Annealing on Structural And and Electrical characteristics Characteristics of Ni-Al-O gate Gate dielectrics Dielectrics[J]. Journal of Inorganic Materials, 2011, 26(3): 257-260.

参考文献

[1] Wilk G D, Wallace R M, Anthony JM. High-k gate dielectrics: Current current statusand materials properties considerations. J .Appl .Phys .,2001,89(10):5243-5275.
[2] 程学瑞, 戚泽明, 张国斌, 等(Cheng Xue-rui Rui, et al). HfO₂栅介质薄膜的结构和介电性质研究. 无机材料学报(Journal of InorganicMaterials), 2010,25(5):468-472.
[3] 方泽波, 谭永胜, 朱燕艳, 等(Fang Ze-bo Bo, et al). 非晶Er₂O₃高k栅介质薄膜的制备及结构特性研究. 无机材料学报(Journalof Inorganic Materials), 2008,23(2):357-360.
[4] Auciello O, Fan W, Kabius B, et al. Hybridtitanium–aluminum oxide layer as alternative high-k gate dielectric for thenext generation of complementary met al–oxide–semiconductor devices.Appl .Phys .Lett ., 2005,86(4):042904-1-3.
[5] Tellez S C, Mendoza J G, Frutis M A, et al. Electrical,optical, and structural characteristics of Al₂O₃ thinfilms prepared by pulsed ultrasonic sprayed pyrolysis.J .Appl . Phys .,2008,103(3):034105-1-7.
[6] Chuang K C, Hwu J G. Improvement in electrical characteristics ofhigh-k Al₂O₃ gate dielectric by field-assisted nitricoxidation.Appl . Phys . Lett ., 2006,89(23):232903-1-3.
[7] Lin Y H, Wang J F, Jiang L, et al. High permittivity Li and Al doped NiO ceramics. Appl .Phys .Lett .,2004,85(23):5664-5666.
[8] Liu B T, Cheng C S, Li F, et al. Ni-Al diffusion barrier layer for integrating ferroelectric capacitorson Si. Appl . Phys .Lett .,2006,88(25):252903-1-3.
[9] Liu B T, Yan X B, Zhang X , et al. Barrier performanceof ultrathin Ni–Ti film for integrating ferroelectric capacitors on Si.Appl . Phys . Lett. , 2007,91(14):142908-1-3.
[10] Liu B T, Yan X B, Guo Y N , et al. Influenceof crystallinity on the oxidation resistance of Ni–Al film used as diffusion barrierlayer. J . Phys .D: Appl .Phys. . , 2009,42(9):065419-1-7.
[11]Song X F, Fu R L, He H.Frequency effects on the dielectric properties of AlN film deposited by radio frequency reactive magnetron sputtering.Microelectron .Eng. , 2009,86(11):2217-2221.
[12] Thomas R, Dube D C, Kamalasanan M N, et al. Structural,electrical, and low-temperature dielectric properties of Sol-Gel derived SrTiO₃thin films. J . Appl .Phys . , 1999,82(9):4484-4488.
[13] Sel?uk A B. On the dielectric characteristics of Au/SnO₂/n-Sicapacitors. Physica B, 2007,396(1- /2): 181-186.
[14] Henson W K, Ahmed K Z, Vogel E M, et al. Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance–voltage measurements on MOS capacitors.IEEE Electron .Device Letts. , 1999,20(4):179-181.
[15] Wang S J, Ong C K. Rapid thermal annealing effect on crystallineyttria-stabilized zirconia gate dielectrics. Semicond . Sci . Technol. ,2003,18(2):154-157.
[16] Guo Y N, Liu B T, Zhao J W, et al . Barrier performance of various thick polycrystalline Ni- Al films for integrating PbZr_0.4Ti_0.6O₃ capacitors on Si. J.Electrochem.Soc., 2010, 157(6): G127- G129.

快速退火对 Ni-Al-O 栅介质结构和介电性能的影响

Effect of RapidThermal Annealing on Structural And and Electrical characteristics Characteristics of Ni-Al-O gate Gate dielectrics Dielectrics

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 2

编辑推荐

Metrics

本文评价

[1]	王靖瑜, 万昌锦, 万青. 基于Al₂O₃/Chitosan叠层栅介质的双栅IGZO神经形态晶体管[J]. 无机材料学报, 2023, 38(4): 445-451.
[2]	方泽波,谭永胜,朱燕艳,陈圣,蒋最敏. 非晶Er₂O₃高 k栅介质薄膜的制备及结构特性研究[J]. 无机材料学报, 2008, 23(2): 357-360.