非晶Er2O3高 k栅介质薄膜的制备及结构特性研究

doi:10.3724/SP.J.1077.2008.00357

无机材料学报

非晶Er₂O₃高 k栅介质薄膜的制备及结构特性研究

方泽波^1,2, 谭永胜¹, 朱燕艳², 陈圣², 蒋最敏²

1. 绍兴文理学院物电系, 绍兴 312000; 2. 复旦大学应用表面物理国家重点实验室, 上海 200433

收稿日期:2007-04-17 修回日期:2007-05-28 出版日期:2008-03-20 网络出版日期:2008-03-20

Structural Characteristics of Amorphous Er₂O₃ Films Grown on Si (001) by Reactive Evaporation

FANG Ze-Bo^1,2, TAN Yong-Sheng¹, ZHU Yan-Yan², CHEN Sheng², JIANG Zui-Min²

1. Department of Physics, Shaoxing University, Shaoxing 312000, China; 2. Surface Physics Laboratory, Fudan University, Shanghai 200433, China

Received:2007-04-17 Revised:2007-05-28 Published:2008-03-20 Online:2008-03-20

摘要/Abstract

摘要： 采用高真空反应蒸发法在未加热的p型Si(100)衬底上实现了非晶Er₂O₃高k栅介质薄膜的生长. 俄歇电子能谱证实薄膜组分符合化学剂量比. X射线衍射、反射式高能电子衍射和高分辨透射电子显微镜测量表明, 不但原位沉积的薄膜是非晶结构, 而且高真空700℃退火30min后样品仍保持了良好的非晶稳定性. 原子力显微镜检测显示高真空退火有利于改善薄膜的表面形貌. 退火后, Er₂O₃薄膜获得了平整的表面. 电容-电压测试得到薄膜的有效介电常数为12.6, EOT为1.4nm, 在1MV/cm时漏电流密度为8×10^-4A/cm². 这些特征表明非晶Er₂O₃薄膜是一种较好的高k栅介质候选材料.

关键词: 高k栅介质, Er₂O₃薄膜, 反应蒸发

Abstract: High k dielectric Er₂O₃ were deposited on p-type Si (100) substrates by reactive evaporation using metallic Er source at room temperature in an oxygen atmosphere. The composition of the films is determined to be stoichiometric. X-ray diffraction, reflection high energy electron diffraction and high resolution transmission electron microscopy tests reveal
that the films are amorphous even after thermal annealing at 700℃. The films have very flat surface after high temperature annealing. The dielectric constant of Er₂O₃ films is 12.6, an effective oxide thickness of 1.4nm is achieved, with a low leakage current density of 8×10^-4 A/cm² at electric field of 1MV/cm after annealing. The obtained results indicate that the amorphous Er₂O₃ film is a promising candidate for high k gate dielectric in Si microelectronic devices.

Key words: high k dielectric film, Er₂O₃, reactive evaporation

中图分类号:

O484

方泽波,谭永胜,朱燕艳,陈圣,蒋最敏. 非晶Er₂O₃高 k栅介质薄膜的制备及结构特性研究[J]. 无机材料学报, DOI: 10.3724/SP.J.1077.2008.00357.

FANG Ze-Bo,TAN Yong-Sheng,ZHU Yan-Yan,CHEN Sheng,JIANG Zui-Min. Structural Characteristics of Amorphous Er₂O₃ Films Grown on Si (001) by Reactive Evaporation[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2008.00357.

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非晶Er₂O₃高 k栅介质薄膜的制备及结构特性研究

Structural Characteristics of Amorphous Er₂O₃ Films Grown on Si (001) by Reactive Evaporation

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