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无机材料学报

无机材料学报

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用于非制冷热释电红外探测器的 PZT铁电薄膜研究

王忠华, 李振豪, 普朝光, 杨培志, 林猷慎   

  1. 昆明物理研究所, 昆明 650223
  • 收稿日期:2005-09-14 修回日期:2005-11-15 出版日期:2006-09-20 网络出版日期:2006-09-20

PZT Ferroelectric Thin Film for Uncooled Pyroelectric Infrared Detectors

WANG Zhong-Hua, LI Zhen-Hao, PU Chao-Guang,YANG Pei-Zhi, LIN You-Shen   

  1. Kunming Institute of Physics, Kunming 650223, China
  • Received:2005-09-14 Revised:2005-11-15 Published:2006-09-20 Online:2006-09-20

PDF (PC)

1861

被引次数

3

摘要：

采用溶胶-凝胶和射频磁控溅射相结合的方法制备了PZT铁电薄膜. 用溶胶-凝胶法制备一层PZT薄膜作为籽晶层, 在衬底PZT(seed layer)/Pt/Ti/SiO2/Si上用射频磁控溅射过量10%Pb的Pb(ZrxTi1-x)O3(x=0.3)陶瓷靶生长厚500nm的PZT铁电薄膜. 采用在450℃预退火, 575℃后退火的快速分级退火方法对PZT铁电薄膜进行热处理. PZT铁电薄膜获得了较好的热释电性能, 热释电系数、介电常数、介电损耗和探测度优值因子分别为ρ=2.3×10-8C．cm-2·K-1, ε =500, tanδ =0.02, F d=0.94×10-5Pa-0.5.

关键词: 非制冷热释电红外探测器, PZT, 籽晶层, 快速分级退火

Abstract:

Lead zirconate titanate(PZT) ferroelectric thin films were prepared by both sol-gel and r.f. magnetron sputtering technologies. In order to decrease the crystallization temperature of thin films and improve the probabilities of nucleus, a PZT seed-layer was prepared by using the sol-gel method. The PZT ferroelectric thin films with about 500nm thickness were sputter-deposited from a Pb(ZrxTi1-x)O3(x=0.3) ceramic target containing 10% excess Pb on PZT(seed layer)/Pt/Ti/SiO2/Si substrates. The stepping-annealing with RTP (rapid theal process) was proposed for theal treatment of the PZT ferroelectric thin films. The PZT ferroelectric thin film showed good dielectric and pyroelectric properties
by pre-annealing at 450℃ for 5min and following post-annealing at 575℃ for 5min. The results of pyroelectric coefficient 2.3×10-8C·cm-2·K-1, relative dielectric constant 500, dielectric loss 0.02, detectivity figure of merit 0.94×10-5Pa-0.5 were obtained.

Key words: uncooled pyroelectric infrared detectors, lead zirconate titanate(PZT), seed layer, rapid stepping-annealing

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