飞秒脉冲激光沉积 Si基α轴择优取向的钛酸铋铁电薄膜及I-V特性研究

doi:10.3724/SP.J.1077.2006.01230

无机材料学报

飞秒脉冲激光沉积 Si基α轴择优取向的钛酸铋铁电薄膜及I-V特性研究

周幼华^{1, 2}, 郑启光¹, 杨光¹, 龙华¹, 陆培祥¹

1. 华中科技大学激光技术国家重点实验室, 武汉 430074; 2. 江汉大学物理与信息工程学院, 武汉 430056

收稿日期:2005-10-10 修回日期:2006-01-13 出版日期:2006-09-20 网络出版日期:2006-09-20

α-axis Oriented Bi₄Ti₃O₁₂ Thin Films Deposited on Si(111) by Femtosecond Laser Ablation and Its Characteristic of I-V Curve

ZHOU You-Hua^1,2, ZHENG Qi-Guang¹, YANG Guang¹, LONG Hua¹, LU Pei-Xiang¹

1. State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074, China, 2. Physics & Information School of Jianghan University, Wuhan 430056, China

Received:2005-10-10 Revised:2006-01-13 Published:2006-09-20 Online:2006-09-20

摘要/Abstract

摘要： 采用飞秒脉冲激光沉积系统, 在Si(111)衬底上制备了a轴和c轴择优取向的Bi₄Ti₃O₁₂薄膜. X
射线衍射(XRD)表明:室温(20℃)下沉积的Bi₄Ti₃O₁₂/Si(111)薄膜呈c轴择优取向, 晶粒的平均直径为20nm. 在500℃沉积的Bi₄Ti₃O₁₂/Si(111)薄膜呈a轴择优取向. 测量了薄膜的电滞回线和I-V特性曲线, 并用分布参数电路研究了Bi₄Ti₃O₁₂薄膜的I-V特性曲线和铁电性的关联性. a轴择优取向Bi₄Ti₃O₁₂薄膜的剩余极化强度P_r=15μC/cm^2, 矫顽力E_c=48kV/cm.

关键词: 飞秒, 脉冲激光沉积法(PLD), 钛酸铋, 铁电薄膜

Abstract:

The polycrystalline Bi₄Ti₃O₁₂ thin films were successfully prepared by femtosecond laser deposition on Si(111) wafers. X-ray diffraction (XRD) showed that Bi₄Ti₃O₁₂ thin film was highly c-axis-oriented deposited at room temperature (20℃), but the film was highly a-axis-oriented deposited at 500circC. The remanent polarization (P _r) and coercive force (E_c) of a-axis-oriented samples were measured to be 15μC/cm² and 48kV/cm respectiovely. An equivalent circuit with distributed constants of Bi₄Ti₃O₁₂/Si was introduced to interpret the relationship between the I-V characteristic curve and the ferroelectric hysteresis loop of Bi₄Ti₃O₁₂ deposited on Si.

Key words: femtosecond, pulsed laser deposition, Bi4Ti3O12, ferroelectric

中图分类号:

O484

周幼华,郑启光,杨光,龙华,陆培祥. 飞秒脉冲激光沉积 Si基α轴择优取向的钛酸铋铁电薄膜及I-V特性研究[J]. 无机材料学报, DOI: 10.3724/SP.J.1077.2006.01230.

ZHOU You-Hua,ZHENG Qi-Guang,YANG Guang,LONG Hua,LU Pei-Xiang. α-axis Oriented Bi₄Ti₃O₁₂ Thin Films Deposited on Si(111) by Femtosecond Laser Ablation and Its Characteristic of I-V Curve[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2006.01230.

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飞秒脉冲激光沉积 Si基α轴择优取向的钛酸铋铁电薄膜及I-V特性研究

α-axis Oriented Bi₄Ti₃O₁₂ Thin Films Deposited on Si(111) by Femtosecond Laser Ablation and Its Characteristic of I-V Curve

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飞秒脉冲激光沉积 Si基α轴择优取向的钛酸铋铁电薄膜及I-V特性研究

α-axis Oriented Bi4Ti3O12 Thin Films Deposited on Si(111) by Femtosecond Laser Ablation and Its Characteristic of I-V Curve

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α-axis Oriented Bi₄Ti₃O₁₂ Thin Films Deposited on Si(111) by Femtosecond Laser Ablation and Its Characteristic of I-V Curve