[1] Bryzek J, Petersen K, McCulley W. IEEE Spectrum, 1994. 20-31. [2] Whatmore R W. Ferroelectrics, 1998, 225: 179-192. [3] Whatmore R W, Watton R. Pyroelectric materials and devices, Infrared detectors and emitters: materials and devices (ISDN 0-7923-7206-9). London: Chapman & Hall, 2000. 99-148. [4] Su Q-X, Kirby P, Komuro E, et al. IEEE Trans, 2001, 49 (4): 769-78. [5] Cross L E, Trolier-McKinstry S. Encl. Appl. Phys, 1997, 21: 429. [6] Polla D L, Francis L F. MRS Bull, ]rm 1996, 21 (7): 59-65. [7] Kim J H, Wang L, Zurn S M, et al. Integ. Ferroelec, 1997, 15: 325-332. [8] Lee C, Itoh T, Suga T. IEEE Trans. Ultrason. Ferroelec. Freq. Contr., 1996, 43: 553-559. [9] Bernstein J J, Finberg S L, Houston K, et al. IEEE Trans. Ultrason. Ferroelec. Freq. Contr., 1997, 44: 960-969. [10] Flynn A M, Tavrow L S, Bart S F, et al. Micro-electromech. Syst., 1992, 1: 47-51. [11] Hanson Cm, Beretan H R, Belcher J F, et al. Proc SPIE, 1998, 3379: 60. [12] Whatmore R W, Zhang Q, Huang Z, et al. Materials Science in Semiconductor Processing, 2003, 5: 65-76. [13] Donohue P P, Todd M A, Anthony C J, et al. Integ Ferroceletrics, 2001, 41: 25-34. [14] Xu Baomin, Cross Eric L, Bernstein Jonathan J. Thin Solid Films, 2000, 377-378: 712-718. [15] Polla Dennis L. Microelectronic Engineering, 1995, 29: 51-58. [16] Bernstein J J, Bottari J, Houston K, et al. IEEE Ultrasonics Symposium, 1999. 1145-1153. |