ZnO薄膜p型掺杂的研究进展

摘要/Abstract

摘要： ZnO是一种新型的II-VI族半导体材料,具有许多优异的性能.但由于ZnO存在诸多的本征施主缺陷(如空位氧V_o和间隙锌Zn_i),对受主产生高度自补偿作用,天然为n型半导体,难以实现p型转变.ZnO薄膜p型掺杂的实现是ZnO基光电器件的关键技术,也一直是ZnO研究中的主要课题,目前已取得重大进展,文章对此进行了详细阐述.

关键词: ZnO薄膜, p型掺杂, 特性

Abstract: ZnO is a novel material for II--VI semiconductor. Researches indicate that n-type ZnO films can be well prepared, this is due to the high self-compensating process
on doping derived from the intrinsic donor defects such as oxygen vacancy (V_O) and zinc interstitial (Zn_i atoms, so n-typed ZnO films are formed naturally
and p-type ZnO films are difficult to be prepared. How to realize p-type ZnO films through doping is the key step for application in the fields of ZnO-based opoelectrical
devices, in which great progresses have been made now. This paper summarized the recent advances in research on p-type ZnO.

Key words: zinc oxide thin film, p-type ZnO, property

中图分类号:

TN304
O475

叶志镇,张银珠,徐伟中,吕建国. ZnO薄膜p型掺杂的研究进展[J]. 无机材料学报.

YE Zhi-Zhen,ZHANG Yin-Zhu,XU Wei-Zhong,LU Jian-Guo. Recent Advances in Research on p-Type ZnO[J]. Journal of Inorganic Materials.

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