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多晶氧化钨薄膜的制备及其红外反射调制性能研究

黄银松; 章俞之; 宋力昕; 胡行方   

  1. 中国科学院上海硅酸盐研究所 上海 200050
  • 收稿日期:2001-10-15 修回日期:2002-01-04 出版日期:2002-11-20 网络出版日期:2002-11-20

Preparation and Infrared Reflectance Modulation Characteristics of Polycrystalline Tungsten Oxide Film

HUANG Yin-Song; ZHANG Yu-Zhi; SONG Li-Xin; HU Xing-Fang   

  1. Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China
  • Received:2001-10-15 Revised:2002-01-04 Published:2002-11-20 Online:2002-11-20

摘要: 通过工艺参数的优化,采用直流反应溅射工艺成功地制备了具有良好的电化学循环稳定性的多晶氧化钨薄膜.Raman散射光谱研究表明:随着锂离子和电子的共同注入,多晶薄膜中的W6+逐渐被还原为W5+.红外反射测试表明:电子注入薄膜后,成为自由载流子,使得氧化钨薄膜表现出一定的金属特性,具有一定的红外反射调制能力.采用该工艺制备的WO3/ITO/Glass结构的发射率可在0.261~0.589的范围内可逆调节.

关键词: 直流反应溅射, 多晶氧化钨薄膜, Raman散射, 红外反射, 发射率

Abstract: Polycrystalline tungsten oxide films with good electrochemical stability were prepared by dc reactive sputtering methods. The Raman spectra of the films show that W6+ is reduced to W5+ with Li+ and electrons co-intercalation. Intercalated electrons entere extended states of crystalline tungsten oxide and cause infrared reflectance. The emissivity of WO3/ITO/Glass can be reversible modulated between 0.261-0.589.

Key words: dc reactive sputtering, polycrystalline tungsten oxide films, infrared reflectance

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