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无机材料学报

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激光作用下GeS2非晶半导体薄膜的性能及结构变化

刘启明; 干福熹; 顾冬红   

  1. 中国科学院上海光学精密机械研究所 上海 201800
  • 收稿日期:2001-07-02 修回日期:2001-08-20 出版日期:2002-07-20 网络出版日期:2002-07-20

Changes of Properties and Structure in Amorphous GeS2 Films by Laser Illumination

LIU Qi-Ming; GAN Fu-Xi; GU Dong-Hong   

  1. Shanghai Institute of Optics and Fine Mechanics; Chinese Academy of Sciences; Shanghai 201800; China
  • Received:2001-07-02 Revised:2001-08-20 Published:2002-07-20 Online:2002-07-20

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摘要： 采用514.5石nm波长的氩离子激光器,结合X射线衍射分析（XRD）、红外光谱分析（IR）、扫描电镜分析（SEM）和透射光谱分析,研究了GeS2非晶半导体薄膜在激光辐照后的性能及结构变化.实验结果发现,经热处理和激光辐照后,薄膜的光学吸收边均移向短波长处,并且随着辐照激光强度和辐照时间的增加而增加,这种平移在退火薄膜中是可逆的.SEM结果分析表明,薄膜在激光辐照后有晶相出现,且随着辐照激光强度的增加,晶相更多.

关键词: GeS2非晶半导体薄膜, 氩离子激光辐照, 光致变化

Abstract: The changes of properties and structure in GeS2 amorphous semiconductor films by light illumination from Ar ion laser were studied with the XRD, IR, SEM and
transmission spectra analysises. Photoinduced crystallization was also observed in the exposed films. The results show that the optical absorption edges of the
films shift to shorter wavelength according to annealing and light illumination. The magnitude of shift increases with the increase of the intensity of illumination
light and the illumination time, and the shift in annealed films is reversible.

Key words: amorphous GeS2 film, ar ion laser illumination, photoinduced change

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