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无机材料学报

无机材料学报

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a-C:H(N)薄膜的制备及性能

程宇航1; 吴一平1; 陈建国1; 乔学亮1; 谢长生1; 许德胜2   

  1. 华中理工大学1. 材料科学与工程系; 2. 激光技术国家重点实验室, 武汉 430074
  • 收稿日期:1998-08-10 修回日期:1998-09-10 出版日期:1999-08-20 网络出版日期:1999-08-20

Deposition and Properties of a C:H(N) Films

CHENG Yu-Hang1, WU Yi-Ping1, CHEN Jian-Guo1, QIAO Xue-Liang1, XIE Cang-Sheng1, XU De-Sheng 2   

  1. 1. Depart of Materials Science and Engineering; Huazhong University of Science and Technology Wuhan 430074 China; 2. State Key Laboratory of Laser Technology, Huazhong University of Science and Technology Wuhan 430074 China
  • Received:1998-08-10 Revised:1998-09-10 Published:1999-08-20 Online:1999-08-20

PDF (PC)

852

被引次数

2

摘要： 采用射频直流等离子化学气相沉积法用 Ｃ２ Ｈ２ 、 Ｎ２ 和 Ａｒ 组成的混合气体制备ａ-Ｃ： Ｈ （ Ｎ） 薄膜， 研究了薄膜的制备工艺、结构及直流导电特性实验结果表明， ａ Ｃ： Ｈ （ Ｎ） 薄膜的沉积速率随混合气体中 Ｃ２ Ｈ２ 含量的增加而增大， 当混合气体中 Ｎ２ 含量增加到７５ ％ 时， 薄膜的含氮量增大到９０９ ％ 薄膜中 Ｃ、 Ｎ 原子以 Ｃ≡ Ｎ 和 Ｃ- Ｎ 键的形式存在， 结合进薄膜中的氮大大降低薄膜的直流电阻率

关键词: a-C:H（N）薄膜, 等离子增强化学气相沉积, 制备工艺, 直流电阻率

Abstract: a-C:H(N) films were deposited from mixture gases of C2H2, Ar and N2 by r.f.-d.c. PECVD method. The deposition process, structure and direct current resistivity of the a-C:H(N) films were studied. The deposition rate of the a-C:H(N)
films increases with the increase of C2H2 content in the feed gases. The study of XPS and FTIR spectroscopy indicates that up to 9.09at% N can be incorporated
with C atoms in a-C:H(N) films as C≡N and C--N. The bonded N in a-C:H(N) films leads to the decrease of direct current resistivity.

Key words: a-C:H(N) films, plasma enhanced chemical vapor deposition, deposition process, direct current resistivity

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