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无机材料学报

无机材料学报

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纳米Cu2O/TiO2 异质结薄膜电极的制备和表征

唐一文1, 陈志钢1,2, 张丽莎1, 贾志勇1, 张新1   

  1. 1. 华中师范大学纳米科技研究院, 武汉430079;
    2. 复旦大学先进材料实验室, 上海 200433
  • 收稿日期:2005-03-07 修回日期:2005-05-09 出版日期:2006-03-20 网络出版日期:2006-03-20

Preparation and Characterization of Nanocrystalline Cu2O/TiO2 Heterojunction Film Electrode

TANG Yi-Wen1, CHEN Zhi-Gang1,2, ZHANG Li-Sha1, JIA Zhi-Yong1, ZHANG Xin1   

  1. 1. Institute of Nano-science and Technology, Central China Normal University,
    Wuhan 430079, China;
    2. Laboratory of Advanced Materials, Fudan University, Shanghai 200433,China
  • Received:2005-03-07 Revised:2005-05-09 Published:2006-03-20 Online:2006-03-20

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摘要： 通过阴极还原在纳米TiO2膜上电沉积Cu2O, 获得了p-Cu2O/n- TiO2异质结电极. 研究了沉积温度对Cu2O膜厚、纯度和形貌的影响, 制备出纯度较高、粒径为40～50nm的Cu2O薄膜. 纳米Cu2O膜在200℃烧结后透光性最好, 禁带宽度为2.06eV. 光电化学测试表明纳米p-Cu2O/n-TiO2异质结电极呈现较强的n-型光电流响应并且能够提高光电转换效率.

关键词: 氧化亚铜薄膜, 二氧化钛膜, 异质结电极, 光电化学

Abstract:

TiO2 film; heterojunction electrode; photoelectrochemistryThis paper introduced the electrochemical deposition of Cu2O thin films on TiO2 films by cathodic reduction to form p-Cu2O/n-TiO2 heterostructure electrode. The effects of bath temperature on film thickness, purity and morphology of Cu2O films were studied. Pure spherically shaped Cu2O grains with 40～50nm diameter were obtained. It is found that annealing at 200℃ can improve the spectral transmittance of the Cu2O film and the film has a band gap of 2.06eV. The measurements of photoelectrochemical behavior of the nanocrystalline p-Cu2O/n-TiO2 heterostructure electrode show that such heterostructure electrode produces strong n-type spectral response and can improve the photoelectron conversion efficiency.

Key words: TiO2 film, heterojunction electrode, photoelectrochemistry

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