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• 研究论文 •    

CaF2晶体热交换坩埚下降法生长固液界面演变及热质输运机制

刘洋1,2, 张中晗1,2, 张晓辉1,2, 姜大朋1, 寇华敏1,2, 苏良碧1,2   

  1. 1.中国科学院 上海硅酸盐研究所 功能晶体与器件全国重点实验室,上海 201899;
    2.中国科学院大学 材料科学与光电工程中心, 北京 100049
  • 收稿日期:2026-04-24 修回日期:2026-06-15
  • 通讯作者: 张中晗, 副研究员. E-mail: zhangzhonghan@mail.sic.ac.cn; 苏良碧, 研究员. E-mail: suliangbi@mail.sic.ac.cn
  • 作者简介:刘 洋(2000-), 男, 硕士研究生. E-mail: liuyang234@mails.ucas.ac.cn
  • 基金资助:
    国家自然科学基金(52450255, W2412088); 中国科学院稳定支持基础研究领域青年团队(YSBR-024)

Interface Evolution and Heat-mass Transfer Mechanisms during CaF2 Crystal Growth by the Heat Exchanger-Bridgman Method

LIU Yang1,2, ZHANG Zhonghan1,2, ZHANG Xiaohui1,2, JIANG Dapeng1, KOU Huamin1,2, SU Liangbi1,2   

  1. 1. State Key Laboratory of Functional Crystals and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China;
    2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2026-04-24 Revised:2026-06-15
  • Contact: ZHANG Zhonghan, associate professor. E-mail: zhangzhonghan@mail.sic.ac.cn; SU Liangbi, professor. E-mail: suliangbi@mail.sic.ac.cn
  • About author:LIU Yang (2000-), male, Master candidate. E-mail: liuyang234@mails.ucas.ac.cn
  • Supported by:
    National Natural Science Foundation of China (52450255, W2412088); CAS Project for Young Scientists in Basic Research(YSBR-024)

摘要: 晶体生长是一个典型的多场耦合的跨尺度过程,其中晶体生长基元的成核相变、晶体缺陷的形成与演变均在晶体生长界面处发生。晶体生长界面的原位观测与精准描述仍是晶体生长领域尚未解决的核心难题,导致目前晶体生长工艺优化仍严重依赖试错,制约大尺寸、低缺陷晶体制备技术发展。本研究针对CaF2晶体生长过程中固液界面难以直接观测、演变机制不清的问题,采用原位观测与数值模拟相结合的方法开展研究。利用界面可视化热交换坩埚下降法晶体生长装置,在恒定主控温度1850 K条件下获得固液界面位置与形态的演变信息,并建立相应的晶体生长数值模拟模型,对界面演变过程进行分析。结果表明:固液界面位置呈现“下移—稳定—上移”的阶段性演变规律,界面形态经历由凹形向凸形转变并伴随“M”型过渡态。界面位置演变主要受熔体顶部吸热与等径侧壁散热竞争关系控制,界面形态演变与界面位置变化及熔体流动结构演变密切相关。原位观测与数值模拟结果吻合良好,验证了模型的可靠性。研究结果为CaF2晶体生长过程中的界面调控提供了依据。

关键词: CaF2晶体, 热交换坩埚下降法, 固液界面, 原位观测, 数值模拟

Abstract: Crystal growth is a typical cross-scale process with multi-field coupling, in which the nucleation and phase transition of crystal growth units, as well as the formation and evolution of crystal defects, all occur at the crystal growth interface. Unfortunately, the in-situ observation and accurate characterization of the crystal growth interface remain a core challenge in the field of crystal growth. This results in the current optimization of crystal growth processes still relying on trial and error efforts, which constrains the technological development for the preparation of large-size and low-defect crystals. Aiming at the difficulties in direct observation and the ambiguity of the evolution mechanism of the solid-liquid interface during CaF2 crystal growth, this study adopts a combined method of in-situ observation and numerical simulation. By utilizing a visualized interfacial heat exchanger-Bridgman crystal growth apparatus, the evolution information regarding the position and morphology of the solid-liquid interface is acquired under a constant main control temperature of 1850 K. Meanwhile, a corresponding numerical simulation model for crystal growth is established to analyze the interfacial evolution process. The results show that the interface position exhibits a stage-wise evolution characterized by downward movement, stabilization, and upward movement, while the interface morphology changes from a concave shape to a convex shape with an intermediate M-shaped transition. The evolution of interface position is mainly governed by the competition between heat absorption at the melt top and heat dissipation through the cylinder sidewall, whereas the evolution of interface morphology is closely related to interface-position variation and melt-flow-structure evolution. Good agreement between in-situ observation and numerical simulation confirms the reliability of the model. These results provide a basis for interface control during CaF2 crystal growth.

Key words: CaF2 crystal, heat exchanger-Bridgman method, solid-liquid interface, in-situ observation, numerical simulation

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