氧化铁忆阻器中缺陷态诱导的模拟型阻变及突触双脉冲易化特性
王彤宇, 冉皓丰, 周广东
Defect-induced Analogue Resistive Switching Behavior in FeOx-based Memristor and Synaptic Paired-pulse Facilitation Feature
WANG Tongyu, RAN Haofeng, ZHOU Guangdong
无机材料学报
.
2023, (4): 437
-444
.
DOI: 10.15541/jim20220721
