氩离子刻蚀对TFA-MOD法YBa2Cu3O7-x薄膜性能的影响研究

doi:10.15541/jim20190102

无机材料学报 ›› 2019, Vol. 34 ›› Issue (12): 1279-1284.DOI: 10.15541/jim20190102 CSTR: 32189.14.10.15541/jim20190102

氩离子刻蚀对TFA-MOD法YBa₂Cu₃O_7-_x薄膜性能的影响研究

罗志永,廖楚剑,蔡传兵,刘志勇,李敏娟,鲁玉明()

上海大学理学院, 物理系, 上海市高温超导重点实验室, 上海 200444

收稿日期:2019-03-04 修回日期:2019-04-28 出版日期:2019-12-20 网络出版日期:2019-06-17
作者简介:罗志永(1992-), 男, 硕士研究生. E-mail: 772520720@qq.com
基金资助:
国家重点研发计划(2016YFF0101701);上海市科学技术委员会(16521108400);上海市科学技术委员会(16DZ0504300);上海市科学技术委员会(14521102800);国家自然科学基金(51572165);国家自然科学基金(11174193)

Argon Ion Etching on Property of YBa₂Cu₃O_7-_x Thin Films Prepared by TFA-MOD Process

LUO Zhi-Yong,LIAO Chu-Jian,CAI Chuan-Bing,LIU Zhi-Yong,LI Min-Juan,LU Yu-Ming()

Shanghai High Temperature Superconducting Key Laboratory, Department of Physics, College of Science, Shanghai University, Shanghai 200444, China

Received:2019-03-04 Revised:2019-04-28 Published:2019-12-20 Online:2019-06-17
Supported by:
National Key R&D Plan(2016YFF0101701);Shanghai Science and Technology Commission Funding(16521108400);Shanghai Science and Technology Commission Funding(16DZ0504300);Shanghai Science and Technology Commission Funding(14521102800);National Natural Science Foundation of China(51572165);National Natural Science Foundation of China(11174193)

摘要/Abstract

摘要：

TFA-MOD工艺制备的YBa₂Cu₃O_7-_x(YBCO)薄膜有独特的生长机制, 高温晶化后的YBCO薄膜表面存在一层由Ba-Cu-O异质相及a轴生长的YBCO晶粒组成的杂质层。为了满足零电阻超导焊接和超导带材钎焊搭接的研究需要, 在不破坏超导特性和晶体结构的前提下, 采用Ar离子对TFA-MOD工艺制备的YBCO薄膜进行刻蚀, 对薄膜进行纳米级的减薄, 实现对薄膜表面杂质的去除。利用拉曼光谱、扫描电子显微镜和X射线衍射等方法对不同刻蚀时间下的薄膜状态进行表征。结果表明, 1.3 μm厚的YBCO薄膜表面杂质层厚度约为220 nm, 并且在过度刻蚀的情况下, YBCO薄膜仍然是c轴取向, 晶体结构没有被破坏。刻蚀后,薄膜内部氧空位缺陷的产生会造成超导转变及载流性能的降低, 但通过吸氧处理后薄膜性能可恢复。

关键词: YBCO薄膜, 杂质, 刻蚀, 超导性能

Abstract:

An impurity layer composed by Ba-Cu-O heterogeneous phase and a-axis YBCO crystal grains exists on the surface of the YBCO film after high-temperature crystallization, due to the unique growth mechanism of the YBCO film prepared by the TFA-MOD method. For the research of zero resistance superconducting welding and conventional resistance welding, we etched the YBCO film with Ar ion, decreasing the thickness of the film and removing the impurity layer without destroying the superconductivity and crystal structure. The Raman spectroscopy and scanning electron microscopy were used to research the states of the film with difference etching time. The results showed that the surface impurity layer of the 1.3 μm YBCO film was about 220 nm. The YBCO film was still crystal and c-axis oriented, though over etching. After etching, the oxygen vacancy defects in the film increased, causing the decrease of superconducting transition and current carrying performance. It can be solved by oxygen-absorbing treatment.

Key words: YBCO film, impurity, etching, superconducting property

中图分类号:

TQ174

罗志永, 廖楚剑, 蔡传兵, 刘志勇, 李敏娟, 鲁玉明. 氩离子刻蚀对TFA-MOD法YBa₂Cu₃O_7-_x薄膜性能的影响研究[J]. 无机材料学报, 2019, 34(12): 1279-1284.

LUO Zhi-Yong, LIAO Chu-Jian, CAI Chuan-Bing, LIU Zhi-Yong, LI Min-Juan, LU Yu-Ming. Argon Ion Etching on Property of YBa₂Cu₃O_7-_x Thin Films Prepared by TFA-MOD Process[J]. Journal of Inorganic Materials, 2019, 34(12): 1279-1284.

图/表 7

图1 样品经不同刻蚀时间对应的Raman光谱图

Fig. 1 Raman spectra of samples with different etching time

图2 样品经不同刻蚀时间的SEM照片

Fig. 2 SEM images of samples with different etching time

图3 样品经不同刻蚀时间的XRD图谱

Fig. 3 XRD patterns of samples with different etching time

图4 刻蚀25 min后薄膜刻蚀区域与未刻蚀区域分界处附近AFM扫描图(a)二维及三维扫描图;(b)台阶曲线

Fig. 4 AFM scan near the boundary between the etched and unetched areas of the film after etching for 25 min (a) 2D and 3D scans; (b) Step curve

图5 样品经不同刻蚀时间的超导转变特性曲线

Fig. 5 Superconducting transition characteristics of samples with different etching time (a) T-R curves; (b) Transition width and initial transition temperature as a function of etching time

图6 感应法测量经不同刻蚀时间样品的Jc曲线

Fig. 6 The Jc curves of samples with different etching time were measured by induction method (a) No oxygen treatment was carried out after etching; (b) Oxygen treatment was carried out after etching; (c) Comparison image of Jc variation trend of oxygen-absorbing and non-oxygen-absorbing samples after etching for different time

图7 不同时间刻蚀后进行吸氧处理与未进行吸氧处理样品的XRD(00l)峰位对比图

Fig. 7 XRD (00l) peak position comparison image of oxygen- absorbing treatment and no oxygen-absorbing treatment samples after etched for different time (a) 25 min; (b) 33 min; (c) 41 min

参考文献 18

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氩离子刻蚀对TFA-MOD法YBa₂Cu₃O_7-_x薄膜性能的影响研究

Argon Ion Etching on Property of YBa₂Cu₃O_7-_x Thin Films Prepared by TFA-MOD Process

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