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无机材料学报

无机材料学报 ›› 2013, Vol. 28 ›› Issue (12): 1364-1368.DOI: 10.3724/SP.J.1077.2013.13210 CSTR: 32189.14.SP.J.1077.2013.13210

• 研究论文 • 上一篇    下一篇

新型相变材料Ti0.5Sb2Te3刻蚀工艺及其机理研究

张 徐1,2, 刘 波1, 宋三年1, 姚栋宁1, 朱 敏1,2, 饶 峰1, 吴良才1, 宋志棠1, 封松林1   

  1. (1.中国科学院 上海微系统与信息技术研究所, 信息功能材料国家重点实验室, 上海200050; 2.中国科学院大学, 北京100083)
  • 收稿日期:2013-04-15 修回日期:2013-06-07 出版日期:2013-12-20 网络出版日期:2013-11-15
  • 作者简介:张 徐(1988–), 男, 硕士研究生. E-mail:zhangxu08@mail.sim.ac.cn
  • 基金资助:

    国家重点基础研究发展计划(2010CB934300, 2011CBA00607); 国家自然科学基金(61006087, 61076121, 61076122, 61106001); 上海市科委(12nm0503701)

Study on Etching Process and Mechanism of New Phase Change Material Ti0.5Sb2Te3

ZHANG Xu1,2, LIU Bo1, SONG San-Nian1, YAO Dong-Ning1, ZHU Min1,2, RAO Feng1, WU Liang-Cai1, SONG Zhi-Tang1, FENG Song-Lin1   

  1. (1. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro- system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; 2. University of the Chinese Academy of Sciences, Beijing 100083, China)
  • Received:2013-04-15 Revised:2013-06-07 Published:2013-12-20 Online:2013-11-15
  • About author:ZHANG Xu. E-mail:zhangxu08@mail.sim.ac.cn
  • Supported by:

    National Key Basic Research Program of China (2010CB934300, 2011CBA00607); National Natural Science Foundation of China (61006087, 61076121,61076122,61106001); Science and Technology Council of Shanghai (12nm0503701)

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摘要： 采用CF4和Ar混合气体研究了新型相变材料Ti0.5Sb2Te3(TST)的刻蚀特性, 重点优化和研究了刻蚀气体总流速、CF4/Ar的比例、压力和功率等工艺参数对刻蚀形貌的影响。结果表明, 当气体总流量为50 sccm、CF4浓度为26%﹑刻蚀功率为400 W和刻蚀压力为13.3 Pa时, 刻蚀速度达到126 nm/min, TST薄膜刻蚀图形侧壁平整而且垂直度好(接近90°)﹑刻蚀表面平整(RMS为0.82 nm)以及刻蚀的片内均匀性等都非常好。

关键词: 新型相变材料, 干法刻蚀, CF4+Ar气体, 刻蚀速度

Abstract: The dry etching characteristic of new Ti0.5Sb2Te3 (TST) phase change material was investigated by using the CF4 and Ar gas mixture. The research mainly focuses on how to optimize the experimental parameters such as gas flow rate within the chamber, CF4/Ar flow ratio, the chamber background pressure and the incident RF power applied to the lower electrode. The results show that CF4 mainly plays a role of chemical etching and Ar plays a role of physical bombardment. The etching rate of TST films increases with the increasing concentration of CF4 in the gas mixture. The etching chamber pressure has less effect on the TST film etching speed, while the etching power has larger effect. The etch rate is up to 126 nm/min with the smooth etched surface (RMS=0.82 nm) and TST film profile is almost vertical (approaching 90°) using optimized etching parameters, including the total flow rate of 50 sccm, CF4 concentration of 26%, power of 400 W and pressure of 13.3 Pa.

Key words: new phase change material, dry etching, CF4/Ar gas mixture, etch rate

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