低温反应溅射Al+α-Al2O3复合靶沉积α-Al2O3薄膜

doi:10.15541/jim20180473

无机材料学报 ›› 2019, Vol. 34 ›› Issue (8): 862-866.DOI: 10.15541/jim20180473 CSTR: 32189.14.10.15541/jim20180473

低温反应溅射Al+α-Al₂O₃复合靶沉积α-Al₂O₃薄膜

程奕天^1,²,邱万奇¹(),周克崧^1,²,刘仲武¹,焦东玲¹,钟喜春¹,张辉¹

^1. 华南理工大学材料科学与工程学院, 广州 510640
^2. 广东省新材料研究所现代材料表面工程技术国家工程实验室, 广东省现代表面工程技术重点实验室, 广州 510651

收稿日期:2018-10-10 修回日期:2019-02-22 出版日期:2019-08-20 网络出版日期:2019-05-29
作者简介:程奕天(1990-), 男, 博士研究生. E-mail: <email>ytcheng220@gmail.com</email>
基金资助:
国家自然科学基金(51271079);广东省科技计划项目(2017B030314122);广州市科技计划项目(201607010091)

Low-temperature Deposition of α-Al₂O₃ Films by Reactive Sputtering Al+α-Al₂O₃ Target

CHENG Yi-Tian^1,²,QIU Wan-Qi¹(),ZHOU Ke-Song^1,²,LIU Zhong-Wu¹,JIAO Dong-Ling¹,ZHONG Xi-Chun¹,ZHANG Hui¹

^1. School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
^2. The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Guangdong Institute of New Materials, Guangzhou 510651, China

Received:2018-10-10 Revised:2019-02-22 Published:2019-08-20 Online:2019-05-29
Supported by:
National Natural Science Foundation of China(51271079);Science and Technology Planning Project of Guangdong Province(2017B030314122);Science and Technology Program of Guangzhou(201607010091)

摘要/Abstract

摘要：

低温沉积α-Al₂O₃薄膜是拓展其实际工程应用的关键。本研究以Al、α-Al₂O₃和Al + 15wt% α-Al₂O₃为靶材, 用射频磁控溅射在Si(100)基体上沉积氧化铝薄膜。用掠入射X射线衍射(GIXRD)、透射电子显微镜(TEM)、能谱仪(EDS)对所沉积薄膜的相结构和元素含量进行研究, 用纳米压痕技术测量薄膜硬度。结果表明, 在550 ℃的基体温度下, 反应射频磁控溅射Al+α-Al₂O₃靶可获得单相α-Al₂O₃薄膜。靶中的α-Al₂O₃溅射至基片表面能优先形成α-Al₂O₃晶核, 在550 ℃及以上的基体温度下可抑制γ相形核, 促进α-Al₂O₃晶核同质外延生长, 并最终形成单相α-Al₂O₃薄膜。

关键词: α-Al₂O₃, 反应溅射, 复合靶, 低温沉积, 纳米压痕

Abstract:

Low-temperature deposition of α-Al₂O₃ film is the key to expand its industrial applications. Al, α-Al₂O₃ and Al + 15wt% α-Al₂O₃ targets were used to deposit alumina films on Si(100). The as-deposited films by radio frequency magnetron sputtering (RFMS) were analyzed by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), and the nano-hardness was measured by depth-sensing indentation method. The results show that the single phase α-Al₂O₃ films were successfully deposited by reactive sputtering the Al+α-Al₂O₃ composite target at 550 ℃. When deposited at the substrate temperature of 550 ℃, the α-Al₂O₃ sputtered from the target preferentially form α-Al₂O₃ nucleus which could suppress the formation of γ phase, and promote the homoepitaxial growth of the α-Al₂O₃ to obtain the single phase α-Al₂O₃ films.

Key words: α-Al₂O₃, reactive sputtering, composite target, low-temperature deposition, nano-indentation

中图分类号:

TQ174

程奕天, 邱万奇, 周克崧, 刘仲武, 焦东玲, 钟喜春, 张辉. 低温反应溅射Al+α-Al₂O₃复合靶沉积α-Al₂O₃薄膜[J]. 无机材料学报, 2019, 34(8): 862-866.

CHENG Yi-Tian, QIU Wan-Qi, ZHOU Ke-Song, LIU Zhong-Wu, JIAO Dong-Ling, ZHONG Xi-Chun, ZHANG Hui. Low-temperature Deposition of α-Al₂O₃ Films by Reactive Sputtering Al+α-Al₂O₃ Target[J]. Journal of Inorganic Materials, 2019, 34(8): 862-866.

图/表 7

图1 射频磁控溅射系统的结构原理图

Fig. 1 Schematic diagram of the experimental setup of Radio Frequency (RF) magnetron sputtering system

表1 550 ℃时溅射不同靶材制备的薄膜的元素组成

Table 1 The elementary compositions of the films deposited at 550 ℃ from various targets

Target	Compositions of the films/at%
Target	Al	O	O/Al
Al	39.14	60.86	1.56
α-Al₂O₃	40.57	59.43	1.47
Al+α-Al₂O₃	38.26	61.74	1.61

图2 550 ℃时溅射Al和α-Al2O3靶沉积薄膜的GIXRD谱图

Fig. 2 GIXRD patterns of the films deposited at 550 ℃ from Al target and α-Al2O3 target

图3 550 ℃时溅射α-Al2O3靶和Al+α-Al2O3复合靶沉积薄膜的GIXRD图谱

Fig. 3 GIXRD patterns of the film deposited at 550 ℃ from α-Al2O3 target and Al+α-Al2O3 composite target

图4 500 ℃溅射Al+α-Al2O3复合靶沉积薄膜的GIXRD图谱

Fig. 4 GIXRD pattern of the film deposited from Al+α-Al2O3 composite target at 500 ℃

图5 550 ℃溅射(a)α-Al2O3靶和(b) Al+α-Al2O3复合靶沉积薄膜的TEM照片

Fig. 5 TEM micrographs of the films deposited at 500 ℃from (a) α-Al2O3 and (b) Al+α-Al2O3 composite targets

图6 550 ℃的基体温度下溅射三种不同靶材沉积薄膜的(a) P-h曲线和(b)硬度

Fig. 6 (a) P-h curves and (b) Hardness of the alumina films deposited from different targets at 550 ℃

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低温反应溅射Al+α-Al₂O₃复合靶沉积α-Al₂O₃薄膜

Low-temperature Deposition of α-Al₂O₃ Films by Reactive Sputtering Al+α-Al₂O₃ Target

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