Journal of Inorganic Materials ›› 2019, Vol. 34 ›› Issue (3): 321-327.DOI: 10.15541/jim20180293
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HUANG Zhi-Cheng1,2, YAO Yao1, PEI Jun1,2, DONG Jin-Feng2, ZHANG Bo-Ping1, LI Jing-Feng2, SHANG Peng-Peng3
Received:
2018-06-29
Revised:
2018-08-03
Online:
2019-03-20
Published:
2019-02-26
About author:
HUANG Zhi-Cheng. E-mail: z.c.huang@foxmail.com
Supported by:
CLC Number:
HUANG Zhi-Cheng, YAO Yao, PEI Jun, DONG Jin-Feng, ZHANG Bo-Ping, LI Jing-Feng, SHANG Peng-Peng. Preparation and Thermoelectric Property of n-type SnS[J]. Journal of Inorganic Materials, 2019, 34(3): 321-327.
Fig. 1 XRD patterns of the SnS1-xClx(x=0, 0.02, 0.03, 0.04, 0.05, 0.06) bulks at (a) 20°-70°, (b) 31.3°-31.8°and (c) 56.5°-56.8°, which was measured along the hot pressing direction
Fig. 2 Lattice parameters (dots) and cell volume (histogram) of the SnS1-xClx(x=0, 0.02, 0.03, 0.04, 0.05, 0.06) bulks samples along with those of the standard card (dashed lines) for SnS (PDF#39-0354)
x | Nominal comp. | Real comp. | RH/(cm3•C-1) | nH/cm-3 | μH/(cm2•V-1•s-1) |
---|---|---|---|---|---|
0 | SnS | SnS0.97 | 1.55×103 | 4.03×1015 | 1.29 |
0.02 | SnS0.98Cl0.02 | SnS0.95Cl | 1.43×105 | 4.35×1013 | 2.83 |
0.03 | SnS0.97Cl0.03 | SnS0.97Cl0.005 | -9.9×103 | 6.31×1014 | 2.34 |
0.04 | SnS0.96Cl0.04 | SnS0.95Cl0.009 | -7.19×103 | 8.68×1014 | 3.04 |
0.05 | SnS0.95Cl0.05 | SnS0.93Cl0.021 | -9.22×102 | 6.78×1015 | 3.18 |
0.06 | SnS0.94Cl0.06 | SnS0.92Cl0.022 | -8.6×102 | 7.27×1015 | 3.60 |
Table 1 Room temperature nominal composition, real composition, Hall coefficient, Hall carrier concentration, and mobility for SnS1-xClx
x | Nominal comp. | Real comp. | RH/(cm3•C-1) | nH/cm-3 | μH/(cm2•V-1•s-1) |
---|---|---|---|---|---|
0 | SnS | SnS0.97 | 1.55×103 | 4.03×1015 | 1.29 |
0.02 | SnS0.98Cl0.02 | SnS0.95Cl | 1.43×105 | 4.35×1013 | 2.83 |
0.03 | SnS0.97Cl0.03 | SnS0.97Cl0.005 | -9.9×103 | 6.31×1014 | 2.34 |
0.04 | SnS0.96Cl0.04 | SnS0.95Cl0.009 | -7.19×103 | 8.68×1014 | 3.04 |
0.05 | SnS0.95Cl0.05 | SnS0.93Cl0.021 | -9.22×102 | 6.78×1015 | 3.18 |
0.06 | SnS0.94Cl0.06 | SnS0.92Cl0.022 | -8.6×102 | 7.27×1015 | 3.60 |
Fig. 3 (a) The back-scattered electron (BSE) image of the polished surface, (b) EDS spectra taken from position 1 and 2 and (c)~(d) elemental distributions of S, Sn for x=0.03 sample
Fig. 4 SEM images of the fractured surface morphologies for (a) x=0, (b) x=0.02, (c) x=0.03, (d) x=0.04, (e) x=0.05, (f) x=0.06, and (g) change of grain size (circle) and relative density (square) with x for SnS1-xClx bulk samples
Fig. 5 Temperature dependence of (a) Seebeck coefficient, (b) relation curve of Hall carrier concentration - Seebeck coefficient, (c) electrical conductivity, and (d) power factor for SnS1-xClx (x=0, 0.02, 0.03, 0.04, 0.05, 0.06)
Fig. 6 Temperature dependence of (a) thermal diffusivity, (b) total thermal conductivity, (c) lattice thermal conductivity, and (d) ZT for SnS1-xClx(x=0, 0.02, 0.03, 0.04, 0.05 0.06)
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