Preparation and Thermoelectric Property of n-type SnS

doi:10.15541/jim20180293

Abstract

Abstract:

SnS composed of low toxicity, low-cost and earth-abundant elements, has extensive attention in the field of thermoelectric research. The n-type SnS_1-_xCl_x(x=0, 0.02, 0.03, 0.04, 0.05, 0.06) polycrystalline bulk thermoelectric samples were prepared by mechanical alloying (MA) combined with Spark Plasma Sintering (SPS). Effect of Cl^- amounts on the phase structure, microstructure and thermoelectric transport properties were systematically studied. Results show that introduction of Cl^- enhances electron concentration which makes intrinsic p-type SnS change to n-type. With the amount of Cl^- increasing, the Hall carrier concentration of n-type SnS semiconductor increases from 6.31×10¹⁴cm^-3 (x=0.03) to 7.27×10¹⁵cm^-3 (x=0.06) at room temperature. The maximum electrical conductivity of 408 S•m^-1 the relatively high Seebeck coefficient of -553 μV•K^-1 are obtained at 823 K for x=0.05 sample, which produces the maximum power factor of 1.2 μW·cm^-1·K^-2. Addition of Cl^- can introduce point defects to scatter phonons, which makes the lattice thermal conductivity reduce from 0.67 W·m^-1·K^-1 (x=0) to 0.5 W·m^-1·K^-1 (x=0.02). The highest ZT~0.17 is obtained at 823 K for x=0.04 sample, which is 70% higher than that (ZT~0.1) of the pristine SnS.

Key words: SnS, Cl-doped, n-type semiconductor, thermoelectric properties

CLC Number:

TB34

HUANG Zhi-Cheng, YAO Yao, PEI Jun, DONG Jin-Feng, ZHANG Bo-Ping, LI Jing-Feng, SHANG Peng-Peng. Preparation and Thermoelectric Property of n-type SnS[J]. Journal of Inorganic Materials, 2019, 34(3): 321-327.

Figures/Tables 7

Fig. 1 XRD patterns of the SnS1-xClx(x=0, 0.02, 0.03, 0.04, 0.05, 0.06) bulks at (a) 20°-70°, (b) 31.3°-31.8°and (c) 56.5°-56.8°, which was measured along the hot pressing direction

Fig. 2 Lattice parameters (dots) and cell volume (histogram) of the SnS1-xClx(x=0, 0.02, 0.03, 0.04, 0.05, 0.06) bulks samples along with those of the standard card (dashed lines) for SnS (PDF#39-0354)

Table 1 Room temperature nominal composition, real composition, Hall coefficient, Hall carrier concentration, and mobility for SnS1-xClx

x	Nominal comp.	Real comp.	R_H/(cm³•C^-1)	n_H/cm^-3	μ_H/(cm²•V^-1•s^-1)
0	SnS	SnS_0.97	1.55×10³	4.03×10¹⁵	1.29
0.02	SnS_0.98Cl_0.02	SnS_0.95Cl	1.43×10⁵	4.35×10¹³	2.83
0.03	SnS_0.97Cl_0.03	SnS_0.97Cl_0.005	-9.9×10³	6.31×10¹⁴	2.34
0.04	SnS_0.96Cl_0.04	SnS_0.95Cl_0.009	-7.19×10³	8.68×10¹⁴	3.04
0.05	SnS_0.95Cl_0.05	SnS_0.93Cl_0.021	-9.22×10²	6.78×10¹⁵	3.18
0.06	SnS_0.94Cl_0.06	SnS_0.92Cl_0.022	-8.6×10²	7.27×10¹⁵	3.60

Fig. 3 (a) The back-scattered electron (BSE) image of the polished surface, (b) EDS spectra taken from position 1 and 2 and (c)~(d) elemental distributions of S, Sn for x=0.03 sample

Fig. 4 SEM images of the fractured surface morphologies for (a) x=0, (b) x=0.02, (c) x=0.03, (d) x=0.04, (e) x=0.05, (f) x=0.06, and (g) change of grain size (circle) and relative density (square) with x for SnS1-xClx bulk samples

Fig. 5 Temperature dependence of (a) Seebeck coefficient, (b) relation curve of Hall carrier concentration - Seebeck coefficient, (c) electrical conductivity, and (d) power factor for SnS1-xClx (x=0, 0.02, 0.03, 0.04, 0.05, 0.06)

Fig. 6 Temperature dependence of (a) thermal diffusivity, (b) total thermal conductivity, (c) lattice thermal conductivity, and (d) ZT for SnS1-xClx(x=0, 0.02, 0.03, 0.04, 0.05 0.06)

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