Journal of Inorganic Materials ›› 2016, Vol. 31 ›› Issue (4): 372-376.doi: 10.15541/jim20150503

• Orginal Article • Previous Articles     Next Articles

Improved Preparation Method and Luminescence Properties of LuTaO4:Ln3+(Ln=Eu,Tb) Thin Film

Shuang WU(), Bo LIU(), Zhi-Che QIU, Shi-Wei CHEN, Juan-Nan ZHANG, Xiao-Lin LIU, Mu GU, Shi-Ming HUANG, Chen NI   

  1. Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
  • Received:2015-10-19 Revised:2015-11-17 Online:2016-04-20 Published:2016-03-25
  • About author:WU Shuang. E-mail:ws19911202@163.com
  • Supported by:
    National Natural Science Foundation of China(11574230, 11374229)

Abstract:

LuTaO4 is a kind of novel material for radiation detectors, but using it to prepare high-quality and transparent thin film is of great challenges. In our previous study, high-quality LuTaO4 thin film was prepared with thickness of single film only about 60 nm, but multilayers film easy to crack. In this study, to ensure no cracking and high transparency of thin film, PVP was chosen as adhesive and single LuTaO4:Ln3+(Ln=Eu,Tb) film of 100 nm was prepared by modulating solid and PVP content through lots of exploration, with improved luminescence properties and high transparency simultaneously. This method lays the foundations for preparation of high-quality applicable LuTaO4:Ln3+(Ln=Eu,Tb) thick film.

Key words: LuTaO4:Ln3+(Ln=Eu,Tb) thin film, Sol-Gel method, solid content, PVP, luminescence properties

CLC Number: 

  • O469