Journal of Inorganic Materials

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Structure and Property Characterization of Bi2-xSbxTe3 Thermoelectric Films Prepared by Electrodeposition

WANG Wei; HUANG Qing-Hua; JIA Fa-Long; ZHANG Zhi-Rong   

  1. Department of Applied Chemistry; School of Chemical Engineering and Technology; Tianjin University; Tianjin 300072; China
  • Received:2004-08-26 Revised:2004-10-15 Published:2005-09-20 Online:2005-09-20

Abstract: Bi2-xSbxTe3 thermoelectric films were prepared by potentiostatic electrodeposition. The morphology, structure and composition of the electrodeposited films were investigated by ESEM, XPS,
XRD, and EDS. And the Seebeck coefficients of Bi2-xSbxTe3 thermoelectric films electrodeposited at different potentials were measured. The results indicate that bismuth, antimony and tellurium can
be coelectrodeposited to form Sb doped Bi2Te3 compouds Bi2-xSbxTe3 in the solution containing Bi3+, HTeO+2and SbO+. The doping concentration of Bi2-xSbxTe3
thermoelectric films can be controlled through adjusting electrodeposition potential to affect their thermoelectric properties. The composition of the film electrodeposited at --0.5V is Bi0.5Sb1.5Te3,
and it has the largest Seebeck coefficient of 213μV·K-1. With the decrease of electrodeposition potential, the crystalline state of Bi_{2-x}Sb_xTe_3 film will transform from equiaxed crystal into
dendritic crystal. The study shows that the electrodeposition process can be successfully used to synthesize the thermoelectric films with better properties.

Key words: thermoelectric films, bismuth antimony telluride compounds, electrodeposition, Seebeck coefficient

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