Growth and Characterization of Sulfur-doped GaSe Single Crystals

doi:10.15541/jim20150032

Abstract

Abstract:

It is difficult to obtain high quality sulfur-doped GaSe single crystal due to the intensive convection and solution diffusion in the melt. High quality GaSe_0.89S_0.11 single crystal with dimensions of ϕ20 mm×60 mm was successfully grown by Bridgman method using modified furnace with crucible rotation technique. The crystal was characterized by using energy dispersive spectrometer, X-ray diffractometer, nanoindentation, and Fourier infrared spectrometer. The measured results indicate that the sulfur-doped GaSe crystal with sulfur level of 2.38wt% shows significantly improved mechanical properties. The infrared transmission tests indicate that it has slightly higher transmittance in the range of 0.62-12.5 µm than the pure GaSe crystal. The results demonstrate that the modified Bridgman method could be used to produce high quality sulfur-doped GaSe crystals.

Key words: GaSe0.89S0.11, doped, modified Bridgman furnace, crucible rotation

CLC Number:

TQ174

HUANG Chang-Bao, NI You-Bao, WU Hai-Xin, WANG Zhen-You, XIAO Rui-Chun, QI Ming. Growth and Characterization of Sulfur-doped GaSe Single Crystals[J]. Journal of Inorganic Materials, 2015, 30(8): 887-890.

Figures/Tables 5

Fig. 1 The schematic of modified Bridgman furnace device

Fig. 2 The photograph of as-grown sulfur-doped GaSe and pure GaSe boule The longer one is sulfur doped GaSe and the shorter one is pure GaSe

Fig. 3 EDS spectrum of the GaSexS1-x sample

Fig. 4 XRD patterns of pure GaSe and GaSe0.89S0.11

Fig. 5 Transmission spectra of pure GaSe and GaSe0.89S0.11 with about 3.5 mm thickness

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