Journal of Inorganic Materials ›› 2015, Vol. 30 ›› Issue (4): 374-378.DOI: 10.15541/jim20140357
• Orginal Article • Previous Articles Next Articles
JU Xiang-Wen, WU Ri-Min, ZHOU Ya-Zhou, MA Shuang-Biao, YANG Juan, CHENG Xiao-Nong
Received:
2014-07-09
Revised:
2014-09-30
Published:
2015-04-29
Online:
2015-03-26
About author:
JU Xiang-Wen. E-mail:juxiangwen22@163.com
CLC Number:
JU Xiang-Wen, WU Ri-Min, ZHOU Ya-Zhou, MA Shuang-Biao, YANG Juan, CHENG Xiao-Nong. Application of Graphene Oxide in Synthesis of Sc2W3O12 Powder[J]. Journal of Inorganic Materials, 2015, 30(4): 374-378.
Fig. 1 XRD patterns of products reacted under different conditions (a) Without GO, 200℃, 20 h; (b) GO assisted, 200℃, 10 h; (c) GO assisted, 200℃, 15 h; (d) GO assisted, 200℃, 20 h
Sample | Lattice parameters/nm | Cellvolume/nm3 | ||
---|---|---|---|---|
a-axis | b-axis | c-axis | ||
Sc2W3O12 | 0.9593 | 0.9695 | 1.3333 | 1.2401 |
Sc2W3O12/GO | 0.9623 | 0.9713 | 1.3358 | 1.2485 |
Table 1 Lattice parameters and cell volume of Sc2W3O12 and Sc2W3O12/GO
Sample | Lattice parameters/nm | Cellvolume/nm3 | ||
---|---|---|---|---|
a-axis | b-axis | c-axis | ||
Sc2W3O12 | 0.9593 | 0.9695 | 1.3333 | 1.2401 |
Sc2W3O12/GO | 0.9623 | 0.9713 | 1.3358 | 1.2485 |
Sample | Absorption band of [WO4] /cm-1 | D-band/cm-1 | G-band/cm-1 | R | La/nm | ||
---|---|---|---|---|---|---|---|
Raman shift | Raman shift | Raman shift | ID/IG | 4.4/R | |||
Sc2W3O12 | 353 | 828 | 1022 | — | — | — | — |
Sc2W3O12/GO | 350 | 827 | 1017 | 1354 | 1599 | 1.0886 | 4.042 |
GO | — | — | — | 1347 | 1584 | 0.9522 | 4.621 |
Table 2 Raman parameters for GO, Sc2W3O12/GO and Sc2W3O12
Sample | Absorption band of [WO4] /cm-1 | D-band/cm-1 | G-band/cm-1 | R | La/nm | ||
---|---|---|---|---|---|---|---|
Raman shift | Raman shift | Raman shift | ID/IG | 4.4/R | |||
Sc2W3O12 | 353 | 828 | 1022 | — | — | — | — |
Sc2W3O12/GO | 350 | 827 | 1017 | 1354 | 1599 | 1.0886 | 4.042 |
GO | — | — | — | 1347 | 1584 | 0.9522 | 4.621 |
Fig. 5 SEM images of the samples prepared at different conditions (a)Without GO, 200℃, 20 h; (b) GO assisted, 200℃, 10 h; (c) GO assisted, 200℃, 15 h; (d) GO assisted, 200℃, 20 h; (e) High-dispersion Sc2W3O12/GO products; (f) Sc2W3O12 powder
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