Characterization of Fluorine and Carbon-Doped Silicon Oxide Film Deposited by PECVD

Abstract

Abstract: Fluorine and carbon-doped silicon oxide films (SiCOF) were deposited from tetraoxethylsilane (TEOS)
and octafluorocyclobutane (C₄F₈) by plasma-enhanced chemical vapor deposition (PECVD). The study of X-ray photoelectron spectrum (XPS) and
Fourier transform infrared spectrum (FTIR) of the film reveals that there are Si-F, Si-O, C-F, C-CF_x, CF₂, etc., configurations co-existing in the
film. The refractive index of the as-deposited film is about 1.40. The refractive index of the film was measured as a function of the time of
exposure to the atmosphere and annealing temperatures, and the mechanism of the change in the refractive index was discussed. The results show that
an ideal deposition temperature is about 300℃.

Key words: PECVD, SiCOF film, XPS, FTIR, refractive index

CLC Number:

TB43

DING Shi-Jin,ZHANG Qing-Quan,ZHANG Wei,WANG Ji-Tao. Characterization of Fluorine and Carbon-Doped Silicon Oxide Film Deposited by PECVD[J]. Journal of Inorganic Materials.

References

[1] Morgen M, Ryan E T, Zhao J H, et al. Annu. Rev. Mater. Sci., 2000, 30: 645--680.
[2] Wang P F, Ding S J, Zhang W, et al. Chin. Phys. Lett., 2000, 17 (12): 912--914.
[3] 王鹏飞，丁士进，张卫，等. 微电子学，2000, 30 (5): 347--350.
[4] Ding S J, Wang P F, Zhang W, et al. Chin. Phys., 2000, 9 (10): 778--782.
[5] Ding S J, Wang P F, Wan X G, et al. Mater. Sci. Eng. B, at press
[6] 丁士进，王鹏飞，张~~卫，等. 光谱学与光谱分析. 2001, 21: (已录用).
[7] Wang P F, Ding S J, Zhang D W, et al. Appl. Phys. A, 2001, 72, 721--724.
[8] Ding S J, Wang P F, Zhang D W, et al. J. Phys. D: Appl. Phys., 2001, 34: 155--159.
[9] Ding S J, Chen L, Wan X G, et al. Mater. Chem. Phys., 2001, 71: 125--130.
[10] Lucovsky G, Yang J, Chao S S, et al. Phys. Rev. B, 1983, 28: 3225--3230.
[11] He L, Inokuma T, Kurata Y, et al. J. Non-Cryst. Solids, 1995, 185: 249--261.
[12] Lucovsky G, Wong C K, Pollard W B. J. Non-Cryst. Solids, 1983, 59\&60: 839--842.
[13] Yoshimaru M, Koizumi S, Shimokawa K, J. Vac. Sci. Technol. A, 1999, 17: 425--432.
[14] Durrant S F, Castro S G C, Bolivar-Marinez L E, et al. Thin solid films, 1997, 304: 149--156.
[15] Agraharam S, Hess D W, Kohl P A, J. Vac. Sci. Technol. A, 1999, 17: 3265--3271.
[16] Cho W S, Oh Y S, Kim C S, J. Alloys. Comp., 1999, 285: 255--259.
[17] Kakana-Georgieva A, Marinova T, Noblanc O, Thin Solid Films, 1999, 337: 180--183.
[18] 丁士进，张卫，王鹏飞，等. 功能材料， 2000， 31 (5): 452--455.
[19] Usami T, Shimokawa K, Yoshimaru M. Jpn. J. Appl. Phys., 1994, 33: 408--412.
[20] Song Y, Sakurai T, Kishimoto K, et al. Thin Solid Films, 1998, 334: 92--97.
[21] Han S M, Aydil E S. J. Vac. Technol. A, 1996, 14: 2062--2070.
[22] Hrubesh L W. Mater. Res. Soc. Symp. Proc., 1995, 381: 267--270.
[23] Jin C M, Luttmer J D, Smith D M, et al. MRS Bulletin, 1997, 22 (10): 39--42.
[24] Carter K R, Cha H J, Dipietro R A. Mater. Res. Soc. Symp. Proc., 1995, 381: 79--82.
[25] Xu Y H, Tsai Y P, Tu K N, et al. Appl. Phys. Lett., 1999, 75: 853--855.
[26] Yoo W S, Swope R, Mordo D. Jpn. J. Appl. Phys., 1997, 36: 267--275.