Abstract: β-SiC thin films were heteroepitaxially grown on (100)Si substrates at a temperaturerange from 1000 to 1400℃ by atmospheric pressure chemical vapor deposition (APCVD) process.Experimental results show that the epitaxial layers change from polycrystalline silicon into singlecrystal β-SiC state with the deposition temperature s increasing, but the growth rates of singlecrystal films decrease inversely.

Key words: epitaxial growth β-SiC films, deposition temperature, crystallinity