Journal of Inorganic Materials ›› 2014, Vol. 29 ›› Issue (9): 905-911.DOI: 10.15541/jim20140019

• Orginal Article • Previous Articles     Next Articles

Research Progress of Film/Bulk Oxide Magnetoelectric Composites

WANG Jing1, WU Xia2, DENG Chao-Yong2, ZHU Kong-Jun1, NAN Ce-Wen3   

  1. (1. State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China; 2. School of Electronics and Information Engineering, Guizhou University, Guiyang 550025, China; 3. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China)
  • Received:2014-01-08 Revised:2014-03-09 Published:2014-09-17 Online:2014-08-21
  • Supported by:
    National Natural Science Foundation of China (51221291, 51202118, 51172108);Doctoral Fund of Ministry of Education of China (20120002120012);A Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions

Abstract:

Composite ceramics of ferrites (e.g., CoFe2O4, NiFe2O4) and ferroelectrics (e.g., BaTiO3, Pb(ZrxTi1-x)O3) are classical magnetoelectric (ME) materials, which are also the first composites found to exhibit large room-temperature ME effect. These composites are generally fabricated via sintering at high temperature of over 1200℃. However, such high-temperature co-firing processing yields atom inter-diffusion and/or chemical reactions between two phases, or even microcracks. In this review, several low-temperature (normally below 800℃) synthesis routes of depositing the ferromagnetic (ferroelectric) films on ferroelectric (ferromagnetic) bulk single-crystals or ceramics are summarized. By such means, the above-mentioned problems can be avoided to improve the ME effect across the interface. Methods frequently used for characterizing the ME effect in these ceramics-based composites films are also discussed.

Key words: film/bulk composite, magnetoelectric effect, low-temperature growth

CLC Number: