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Journal of Inorganic Materials

Journal of Inorganic Materials

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Deposition and Properties of a C:H(N) Films

CHENG Yu-Hang1, WU Yi-Ping1, CHEN Jian-Guo1, QIAO Xue-Liang1, XIE Cang-Sheng1, XU De-Sheng 2   

  1. 1. Depart of Materials Science and Engineering; Huazhong University of Science and Technology Wuhan 430074 China; 2. State Key Laboratory of Laser Technology, Huazhong University of Science and Technology Wuhan 430074 China
  • Received:1998-08-10 Revised:1998-09-10 Published:1999-08-20 Online:1999-08-20

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Abstract: a-C:H(N) films were deposited from mixture gases of C2H2, Ar and N2 by r.f.-d.c. PECVD method. The deposition process, structure and direct current resistivity of the a-C:H(N) films were studied. The deposition rate of the a-C:H(N)
films increases with the increase of C2H2 content in the feed gases. The study of XPS and FTIR spectroscopy indicates that up to 9.09at% N can be incorporated
with C atoms in a-C:H(N) films as C≡N and C--N. The bonded N in a-C:H(N) films leads to the decrease of direct current resistivity.

Key words: a-C:H(N) films, plasma enhanced chemical vapor deposition, deposition process, direct current resistivity

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