p-type Sodium-doped Zinc Oxide Nanowire Arrays Grown by High-pressure Pulsed Laser Deposition

doi:10.3724/SP.J.1077.2014.13284

Journal of Inorganic Materials ›› 2014, Vol. 29 ›› Issue (2): 155-161.DOI: 10.3724/SP.J.1077.2014.13284

• Research Paper • Previous Articles Next Articles

p-type Sodium-doped Zinc Oxide Nanowire Arrays Grown by High-pressure Pulsed Laser Deposition

QIU Zhi-Wen¹, YANG Xiao-Peng¹, HAN Jun¹, ZENG Xue-Song², LI Xin-Hua², CAO Bing-Qiang¹

(1. Key Lab of Inorganic Functional Material in Universities of Shandong, School of Material Science and Engineering, University of Jinan, Jinan 250022, China; 2. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031,China)

Received:2013-05-27 Revised:2013-07-01 Published:2014-02-20 Online:2014-01-17
About author:QIU Zhi-Wen. E-mail: qzw0531@126.com
Supported by:
National Natural Science Foundation of China (51002065; 11174112); Shandong Taishan Scholar Foundation (TSHW20091007); Shandong Provincial Natural Science Foundation (BS2010CL003); Program for New Century Excellent Talents in University, MOE of China (NCET-11-1027, 213021A)

Abstract

Abstract: Sodium-doped ZnO (ZnO:Na) nanowire arrays were grown with high-pressure pulsed laser deposition (HP-PLD). The influence of growth pressure and thickness of gold catalyst layer on the growth of ZnO:Na nanowires were systemically studied. It is found that c-orientated ZnO nanowire arrays grow on single crystal silicon substrates under the optimized condition, e.g. gold catalyst layer’s thickness of 4.2 nm, growth pressure of 3.33×104 Pa and growth temperature of 875 ℃. X-ray diffraction pattern and X-ray photoelectron spectroscope analyses indicate that Na is introduced into ZnO nanowires successfully. Optical fingerprints of sodium-related acceptors in the low-temperature (15 K) photoluminescence spectrum are observed, such as neutral acceptor-bound exciton emission (3.356 eV, A0X), free-electron to neutral-acceptor emission (3.312 eV, (e, A0)), and donor-to-acceptor pair emission (3.233 eV, DAP). ZnO:Na nanowire arrays grown on ZnO:Al/sapphire substrates form the pn junction. The corresponding I-V curve measurements exhibit a clear rectifying behavior of pn homojunction, which further indicates that such ZnO:Na nanowire is of p-type conductivity.

Key words: ZnO nanowires, high-pressure pulsed laser deposition

CLC Number:

TQ132
O472

QIU Zhi-Wen, YANG Xiao-Peng, HAN Jun1 ZENG Xue-Song, LI Xin-Hua, CAO Bing-Qiang. p-type Sodium-doped Zinc Oxide Nanowire Arrays Grown by High-pressure Pulsed Laser Deposition[J]. Journal of Inorganic Materials, 2014, 29(2): 155-161.

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p-type Sodium-doped Zinc Oxide Nanowire Arrays Grown by High-pressure Pulsed Laser Deposition

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