Effects of Ultrasonic Process on Properties of (00l)-oriented HgI2Films byHot-wall PVD

doi:10.3724/SP.J.1077.2011.00261

Journal of Inorganic Materials ›› 2011, Vol. 26 ›› Issue (3): 261-264.DOI: 10.3724/SP.J.1077.2011.00261

• Research Paper • Previous Articles Next Articles

Effects of Ultrasonic Process on Properties of (00l)-oriented HgI₂Films byHot-wall PVD

SU Qing-Feng¹, SHI Wei-Min¹, WANGLin-Jun¹, LI Dong-Min², XIA Yi-Ben¹

1. School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China; 2. Shanghai Westingarea M&E System Co. Ltd, Shanghai 200137, China

Received:2010-05-06 Revised:2010-06-12 Published:2011-03-20 Online:2011-02-18
Supported by:
National Natural Science Foundation of China (10775096); Program for Changjiang Scholars and Innovative Research Team in University (IRT0739);Shanghai Leading Academic Disciplines (S30107)

Abstract

Abstract: Polycrystalline (00l)-oriented HgI₂ films were prepared on ITO glass substrate by the modified Water Bath Hot Wall Physical Vapor Deposition method in the ultrasonic wave field.High quality polycrystalline (00l)-oriented HgI₂ films, growing along the (00l) crystal plane with columnar and uniform grains, were obtained. Effects of growth process parameters on the quality of(00l)-oriented polycrystalline HgI₂films were discussed. The microstructure and surface morphology of HgI₂ films were characterized by X-ray diffraction (XRD), scan electron microscopes (SEM) and Raman spectrum. The results indicatedthat ultrasonic wave could improve the quality of HgI₂films and decrease the deposition temperature of HgI₂ films with increasing ultrasonic frequency from 0 to 59kHz. The growth rate of HgI₂ filmswas increased with the frequency of ultrasonic wave.

Key words: mercuric iodidefilms, polycrystalline, physical vapor deposition, ultrasonicwave

CLC Number:

O484

SU Qing-Feng, SHI Wei-Min, WANGLin-Jun, LI Dong-Min, XIA Yi-Ben. Effects of Ultrasonic Process on Properties of (00l)-oriented HgI₂Films byHot-wall PVD[J]. Journal of Inorganic Materials, 2011, 26(3): 261-264.

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Effects of Ultrasonic Process on Properties of (00l)-oriented HgI₂Films byHot-wall PVD

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