Journal of Inorganic Materials ›› 2020, Vol. 35 ›› Issue (8): 889-894.DOI: 10.15541/jim20190472

Special Issue: 计算材料论文精选(2020)

• RESEARCH PAPER • Previous Articles     Next Articles

Molecular Dynamics Analysis of Chemical Disorders Induced by Irradiated Point Defects in 6H-SiC

ZHANG Xiuyu1(),CHEN Xiaofei2,WANG Hao1,GUO Xun1,XUE Jianming1()   

  1. 1. State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China
    2. China Institute of Nuclear Information and Economics, Beijing 100048, China
  • Received:2019-09-10 Revised:2019-09-25 Published:2020-08-20 Online:2019-10-23
  • Supported by:
    Science Challenge Project(TZ2018004)

Abstract:

To cooperate with studying the influence of chemical disorder on the conductivity of 6H-SiC, the linear collision cascade of 6H-SiC was simulated by the classical molecular dynamics with LAMMPS. Evolution process of main point defects in 6H-SiC during single linear cascade collision and multiple linear cascade collisions under different energy and different types of PKA (Primary Knock-on Atom) is given, while chemical disorder and the final proportion of each of the point defects are counted. The results show that the Si-Si bond generated by the linear cascade collision is easier to form and more stable than the C-C bond. The Si-Si bond is mainly formed by the antisite defect SiC, the C-C bond is mainly formed by the C-interstitial cluster. Their chemical disorder and point defect yield are affected by the type and initial energy of PKA. However, the proportion of each point defect is almost unchanged.

Key words: point defects, chemical disorder, linear collision cascade, molecular dynamics, irradiation

CLC Number: