无机材料学报 ›› 2021, Vol. 36 ›› Issue (12): 1270-1276.DOI: 10.15541/jim20210146 CSTR: 32189.14.10.15541/jim20210146
所属专题: 【信息功能】纪念殷之文先生诞辰105周年虚拟学术专辑
董昌1,2(), 梁瑞虹1,3(), 周志勇1,3, 董显林1,3
收稿日期:
2021-03-11
修回日期:
2021-04-22
出版日期:
2021-12-20
网络出版日期:
2021-06-10
通讯作者:
梁瑞虹, 研究员. E-mail: liangruihong@mail.sic.ac.cn
作者简介:
董 昌(1997-), 男, 硕士研究生. E-mail: cdong@mail.ustc.edu.cn
基金资助:
DONG Chang1,2(), LIANG Ruihong1,3(), ZHOU Zhiyong1,3, DONG Xianlin1,3
Received:
2021-03-11
Revised:
2021-04-22
Published:
2021-12-20
Online:
2021-06-10
Contact:
LIANG Ruihong, professor. E-mail: liangruihong@mail.sic.ac.cn
About author:
DONG Chang (1997-), male, Master candidate. E-mail: cdong@mail.ustc.edu.cn
Supported by:
摘要:
锆钛酸铅(PZT)基压电陶瓷是一类应用非常广泛的功能材料, 可应用于水声换能器、压电马达、医疗超声换能器以及声表面波滤波器等。通过改性提高PZT基压电陶瓷的压电性能一直是该领域的研究热点。本工作采用传统固相反应法制备了准同型相界(Morphotropic Phase Boundary, MPB)组分的Sm-0.25PMN-0.75PZT压电陶瓷, 并对其微观结构以及宏观性能进行了系统研究。研究结果表明:引入Sm3+可以增强压电陶瓷的局域结构异质性, 提升介电响应从而提高压电性能。当Sm3+引入过多时, 铁电极化的长程连续性被大面积打断, 压电性能下降。本实验中得到的最优组分压电陶瓷性能为:高压电系数d33~824 pC/N, 高压电电压常数g33~27.1×10-3 m2/C和相对较高居里温度TC~178 ℃, 电致应变在室温至150 ℃范围内低于5%, 有较好的温度稳定性, 是极具应用前景的高性能压电材料。
中图分类号:
董昌, 梁瑞虹, 周志勇, 董显林. Sm掺杂增强PZT基弛豫型铁电陶瓷压电性能研究[J]. 无机材料学报, 2021, 36(12): 1270-1276.
DONG Chang, LIANG Ruihong, ZHOU Zhiyong, DONG Xianlin. Piezoelectric Property of PZT-based Relaxor-ferroelectric Ceramics Enhanced by Sm Doping[J]. Journal of Inorganic Materials, 2021, 36(12): 1270-1276.
图1 ySm-0.25PMN-0.75PZT陶瓷的表面、断面形貌及晶粒尺寸分布图
Fig. 1 Surface and cross sectional SEM images and grain size distributions of ySm-0.25PMN-0.75PZT ceramics (a) y=0; (b) y=0.4%; (c) y=0.8%; (d) y=1.2%
图3 ySm-0.25PMN-0.75PZT陶瓷在压电力显微镜下的畴随Sm含量的演变图
Fig. 3 PFM phase images (2 μm×2 μm) of ySm-0.25PMN-0.75PZT ceramics (a) y=0; (b) y=0.4%; (c) y=0.8%; (d) y=1.2%
图4 ySm-0.25PMN-0.75PZT陶瓷在(a)y=0, (b)y=0.4%, (c)y=0.8%, (d)y=1.2%的介电温谱曲线@100 Hz~1 MHz; (e)各组分介电温谱对比图@1 kHz
Fig. 4 Temperature dependence of dielectric constant and dielectric loss of ySm-0.25PMN-0.75PZT ceramics (a) y=0, (b) y=0.4%, (c) y=0.8%, (d) y=1.2% @100 Hz-1 MHz; (e) y=0, 0.4%, 0.8%, 1.2%@1 kHz
y | d33/(pC·N-1) | g33/(×10-3, m2·C-1) | εr | tanδ | Ec/(kV·mm-1) | Pr/(μC·cm-2) | Tc@1kHz/℃ | kp | kt | k33 |
---|---|---|---|---|---|---|---|---|---|---|
0 | 543 | 24.8 | 2475 | 0.028 | 0.77 | 42.5 | 199 | 0.58 | 0.41 | 0.67 |
0.4% | 824 | 27.1 | 3434 | 0.032 | 0.80 | 38.7 | 178 | 0.67 | 0.52 | 0.77 |
0.8% | 678 | 20.5 | 3744 | 0.039 | 0.88 | 27.2 | 156 | 0.59 | 0.46 | 0.70 |
1.2% | 522 | 13.9 | 4239 | 0.041 | 0.76 | 24.9 | 144 | 0.43 | 0.33 | 0.52 |
表1 ySm-0.25PMN-0.75PZT陶瓷的综合性能表
Table 1 Comprehensive property of ySm-0.25PMN-0.75PZT ceramics
y | d33/(pC·N-1) | g33/(×10-3, m2·C-1) | εr | tanδ | Ec/(kV·mm-1) | Pr/(μC·cm-2) | Tc@1kHz/℃ | kp | kt | k33 |
---|---|---|---|---|---|---|---|---|---|---|
0 | 543 | 24.8 | 2475 | 0.028 | 0.77 | 42.5 | 199 | 0.58 | 0.41 | 0.67 |
0.4% | 824 | 27.1 | 3434 | 0.032 | 0.80 | 38.7 | 178 | 0.67 | 0.52 | 0.77 |
0.8% | 678 | 20.5 | 3744 | 0.039 | 0.88 | 27.2 | 156 | 0.59 | 0.46 | 0.70 |
1.2% | 522 | 13.9 | 4239 | 0.041 | 0.76 | 24.9 | 144 | 0.43 | 0.33 | 0.52 |
Ceramic | d33/(pC·N-1) | g33/(×10-3, m2·C-1) | εr | Tc@1kHz/℃ | Ref. |
---|---|---|---|---|---|
Sm-PMN-PT | 1510 | 13.1 | 13000 | 89 | [ |
PMN-PT | 663 | 14.2 | 5260 | 159 | [ |
PZT5H | 590 | 19.6 | 3400 | 193 | [ |
0.4%Sm-0.25PMN-0.75PZT | 824 | 27.1 | 3434 | 177 | This work |
表2 本研究与文献报道的压电陶瓷性能对比
Table 2 Comparison of properties between ceramics in this work and literature
Ceramic | d33/(pC·N-1) | g33/(×10-3, m2·C-1) | εr | Tc@1kHz/℃ | Ref. |
---|---|---|---|---|---|
Sm-PMN-PT | 1510 | 13.1 | 13000 | 89 | [ |
PMN-PT | 663 | 14.2 | 5260 | 159 | [ |
PZT5H | 590 | 19.6 | 3400 | 193 | [ |
0.4%Sm-0.25PMN-0.75PZT | 824 | 27.1 | 3434 | 177 | This work |
图6 ySm-0.25PMN-0.75PZT陶瓷的介电常数-温度曲线 @1 kHz(从低温至室温)
Fig. 6 Temperature dependences of dielectric constant of ySm-0.25PMN-0.75PZT@1 kHz from cryogenic temperature to room temperature
图7 0.4%Sm-0.25PMN-0.75PT陶瓷各性能随温度的变化图
Fig. 7 Temperature dependence of properties for 0.4%Sm- 0.25PMN-0.75PZT ceramics (a) Piezoelectric coefficient, dielectric constant, residual polarization; (b) Field-induced longitudinal strain
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