In:Ga2O3氧化物半导体晶体的生长与性能研究

doi:10.15541/jim20160446

无机材料学报 ›› 2017, Vol. 32 ›› Issue (6): 621-624.DOI: 10.15541/jim20160446 CSTR: 32189.14.10.15541/jim20160446

In:Ga₂O₃氧化物半导体晶体的生长与性能研究

唐慧丽^1,2, 吴庆辉^2,3, 罗平^1,2, 王庆国^1,2, 徐军^1,2

(1. 同济大学物理科学与工程学院, 上海200092; 2. 上海蓝宝石晶体工程技术研究中心(筹), 上海 201800; 3. 中国科学院上海硅酸盐研究所, 上海 201800)

收稿日期:2016-07-28 修回日期:2016-08-26 出版日期:2017-06-20 网络出版日期:2017-05-27
作者简介:唐慧丽(1982–), 女, 副教授. E-mail: tanghl@tongji.edu.cn
基金资助:
国家自然科学基金(91333106);上海科委科技攻关项目(13521102700);上海蓝宝石晶体工程技术研究中心(筹)(14DZ2252500);中央高校基本科研业务费专项资金(2015KJ040, 1370219229)

Growth and Property of In:Ga₂O₃ Oxide Semiconductor Single Crystal

TANG Hui-Li^1,2, WU Qing-Hui^2,3, LUO Ping^1,2, WANG Qing-Guo^1,2, XU Jun^1,2

(1. School of Physics Science and Engineering, Tongji University, Shanghai 200092, China 2. Shanghai Engineering Research Center for Sapphire Crystals, Shanghai 201800, China; 3. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China)

Received:2016-07-28 Revised:2016-08-26 Published:2017-06-20 Online:2017-05-27
About author:TANG Hui-Li. E-mail: tanghl@tongji.edu.cn
Supported by:
National Natural Science Foundation of China (91333106);Science and Technology Commission of Shanghai Municipality (13521102700);Science and Technology Commission of Shanghai Municipality (14DZ2252500);Fundamental Research Funds for the Central Universities (2015KJ040, 1370219229)

摘要/Abstract

摘要：

β-Ga₂O₃晶体是一种新型宽禁带氧化物半导体材料, 本征导电性差。为了在调控导电性能的同时兼顾高的透过率和结晶性能, 离子掺杂是一种有效的途径。采用光学浮区法生长出ϕ8 mm×50 mm蓝色透明In:Ga₂O₃晶体, 晶体具有较高的结晶完整性。In³⁺离子掺杂后, β-Ga₂O₃晶体在红外波段出现明显的自由载流子吸收, 热导率稍有减小。室温下, In:Ga₂O₃晶体的电导率和载流子浓度分别为4.94×10^-4 S/cm和1.005×10¹⁶ cm^-3, 其值高于β-Ga₂O₃晶体约1个数量级。In:Ga₂O₃晶体电学性能对热处理敏感, 1200℃空气气氛和氩气气氛退火后电导率降低。结果表明, In³⁺离子掺杂能够调控β-Ga₂O₃晶体的导电性能。

关键词: In: Ga₂O₃晶体, 浮区法, 电导率

Abstract:

β-Ga₂O₃ crystal is a novel oxide semiconductor with wide bandgap, but its intrinsic conductive capability is poor. Ion doping is an effective way to regulate conductivity, transparency and crystallinity of the crystal. Transparent blue In:Ga₂O₃ single crystal with the dimension ofφ8 mm×50 mm was grown by optical floating zone method. The as-grown crystal is of good crystallization quality. After doping In³⁺ ion, β-Ga₂O₃crystal has strong infrared absorption, and its thermal conductivity slightly decreases. At room temperature, the electrical conductivity and carrier concentration of as-grown In:Ga₂O₃ crystal are 4.94×10^-4 S/cm and 1.005×10¹⁶ cm^-3, respectively, which are approximately one order magnitude higher than that of undoped β-Ga₂O₃ crystal. The electrical property of In:Ga₂O₃ crystal is sensitive to heat treatment. After annealing at 1200℃ in air or in argon, its electrical conductivity decreases. These experimental results suggest that In³⁺ ion doping can improve the electrical property of β-Ga₂O₃ single crystal.

Key words: In:Ga₂O₃ single crystal, optical floating zone method, electrical conductivity

中图分类号:

唐慧丽, 吴庆辉, 罗平, 王庆国, 徐军. In:Ga₂O₃氧化物半导体晶体的生长与性能研究[J]. 无机材料学报, 2017, 32(6): 621-624.

TANG Hui-Li, WU Qing-Hui, LUO Ping, WANG Qing-Guo, XU Jun. Growth and Property of In:Ga₂O₃ Oxide Semiconductor Single Crystal[J]. Journal of Inorganic Materials, 2017, 32(6): 621-624.

图/表 6

图1 In:Ga2O3晶体的宏观照片

Fig. 1 Photograph of as-grown In:Ga2O3 crystal

图2 In:Ga2O3晶体粉末的XRD图谱

Fig. 2 XRD pattern of In:Ga2O3 crystal powder

图3 In:Ga2O3和β-Ga2O3晶体的吸收光谱图

Fig. 3 Absorption spectra of In: Ga2O3 and β-Ga2O3 crystals

图4 In:Ga2O3和β-Ga2O3晶体热导率曲线

Fig. 4 Thermal conductivity curves of In:Ga2O3 and β-Ga2O3 crystals vs temperature

图5 In:Ga2O3和β-Ga2O3晶体的电导率温度曲线

Fig. 5 Electrical conductivity curves of In:Ga2O3 and β-Ga2O3 crystals vs temperature

表1 In:Ga2O3和β-Ga2O3晶体霍尔测试结果

Table 1 Hall test results of In:Ga2O3 and β-Ga2O3 crystals

Sample	Temperature /℃	Hall resistance /(cm³•C^-1)	Carrier concentration /cm^-3
β-Ga₂O₃	25	5173.14	1.208×10¹⁵
	50	5236.62	1.194×10¹⁵
	75	5082.47	1.230×10¹⁵
	100	5227.01	1.196×10¹⁵
In:Ga₂O₃	25	621.61	1.005×10¹⁶
	50	599.77	1.042×10¹⁶
	75	591.78	1.056×10¹⁶
	100	585.72	1.067×10¹⁶
Ar annealed In:Ga₂O₃	25	1523.65	4.102×10¹⁵
	50	1519.94	4.112×10¹⁵
	75	1509.66	4.140×10¹⁵
	100	1499.88	4.167×10¹⁵
Air annealed In:Ga₂O₃	25	5178.85	1.207×10¹⁵
	50	5066.33	1.234×10¹⁵
	75	5029.81	1.243×10¹⁵
	100	5025.70	1.244×10¹⁵

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In:Ga₂O₃氧化物半导体晶体的生长与性能研究

Growth and Property of In:Ga₂O₃ Oxide Semiconductor Single Crystal

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