无机材料学报

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SrO-Nb2O5-TiO2系压敏陶瓷中Nb5+和Sr2+的研究

周方桥1; 李莉1; 傅刚2; 陈志雄1; 庄严1   

  1. 1. 广州大学理学院固体物理与材料研究实验室, 广州 510405; 2. 广州新日电子有限公司, 广州 510335
  • 收稿日期:2001-10-29 修回日期:2002-02-19 出版日期:2002-11-20 网络出版日期:2002-11-20

Behaviours of Nb5+ and Sr2+ in The Varistors Based on SrO-Nb2O5-TiO2 Ceramics

ZHOU Fang-Qiao1; LI Li1; ZHUANG Yan2; FU Gang1; CHEN Zhi-Xiong1   

  1. 1. Solid State Physics and Materials Research Lab; Guangzhou University; Guangzhou 510405; China; 2. Guangzhou Sunrise Electronic LTD; Guangzhou 510335; China
  • Received:2001-10-29 Revised:2002-02-19 Published:2002-11-20 Online:2002-11-20

摘要: 用显微观察分析、I-V特性及复阻抗频谱的测量,研究了不同Nb5+和Sr2+掺量的SrO-Nb2O5-TiO2系半导体压敏陶瓷材料的微观结构和相关电学性质;讨论了掺杂Nb5+和Sr2+的分布和作用;Nb5+固溶在TiO2中取代Ti4+并使晶粒成为半导化,同时也有助于晶粒生长;而 Sr2+主要分布在晶粒边界处,对表面受主态及材料相关电学性能有重要影响;在大气气氛中热处理后的实验结果表明:处理温度在800℃以上时,能显著提高压敏电压,但只有适当的热处理温度。才能使非线性系数有所改善.

关键词: (Sr, Nb)-TiO2陶瓷, 半导体, 压敏电阻

Abstract: By microstructure analysis, I-V characteristics and complex impedance spectra measurement, the
microstructure and related electric properties for the varistors based on SrO-Nb2O5-TiO2 semiconducting ceramics with different doped
amounts of Nb5+ and Sr2+ were investigated. The distribution and effects of Nb5+ and Sr2+ on electric properties for the
materials were discussed. The results show that Nb5+ dissolves into TiO2 grains substitutes Ti4+ to enhance ceramic semiconducting
behavior, and proper addition of Nb-doped amount can avail grain growing. The Sr2+ mainly distributes in grain boundary areas,
which behaves as an interface acceptor state and so influences on the electric properties of varistor markedly. The experimental results on
post heat-treatment in air show that the varistor voltage is increased observably with heat-treatment temperature above 800℃, but the
nonlinear coefficient is ameliorated only at an appropriate temperature range.

Key words: (Sr, Nb)-TiO2 ceramic, semiconductor, varistor

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