无机材料学报 ›› 2025, Vol. 40 ›› Issue (5): 545-551.DOI: 10.15541/jim20240244 CSTR: 32189.14.10.15541/jim20240244

• 研究快报 • 上一篇    下一篇

缺陷偶极子热稳定性对Fe掺杂PZT陶瓷机电性能影响研究

孙雨萱1,2(), 王政1, 时雪1, 史颖1,2, 杜文通1,2, 满振勇1, 郑嘹赢1, 李国荣1()   

  1. 1.中国科学院 上海硅酸盐研究所, 中国科学院无机功能材料与器件重点实验室, 上海 200050
    2.中国科学院大学 材料科学与光电子工程中心, 北京 100049
  • 收稿日期:2024-05-14 修回日期:2024-09-24 出版日期:2025-05-20 网络出版日期:2024-11-29
  • 通讯作者: 李国荣, 研究员. E-mail: grli@mail.sic.ac.cn
  • 作者简介:孙雨萱(1999-), 女, 硕士研究生. E-mail: sunyuxuan21@mails.ucas.ac.cn

Defect Dipole Thermal-stability to the Electro-mechanical Properties of Fe Doped PZT Ceramics

SUN Yuxuan1,2(), WANG Zheng1, SHI Xue1, SHI Ying1,2, DU Wentong1,2, MAN Zhenyong1, ZHENG Liaoying1, LI Guorong1()   

  1. 1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
    2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2024-05-14 Revised:2024-09-24 Published:2025-05-20 Online:2024-11-29
  • Contact: LI Guorong, professor. E-mail: grli@mail.sic.ac.cn
  • About author:SUN Yuxuan (1999-), female, Master candidate. E-mail: sunyuxuan21@mails.ucas.ac.cn
  • Supported by:
    National Natural Science Foundation of China(U2241242);National Key R&D Program of China(2023YFB3812000);National Key R&D Program of China(2021YFA0716502)

摘要:

在PbZryTi1-yO3(PZT)基压电陶瓷的Ti4+位点掺杂受主离子是一种众所周知的增加机械品质因数(Qm)的方法, 受主离子与氧空位结合形成缺陷偶极子, 阻碍畴在外电场下的转动。但通常而言, 氧空位随温度升高而迁移, 缺陷偶极子因此而解耦, Qm降低。本研究发现掺杂0.40%(摩尔百分数)Fe2O3的Pb0.95Sr0.05(Zr0.53Ti0.47)O3 (PSZT)陶瓷的Qm随着温度升高而异常增大(在室温下陶瓷的Qm、压电系数(d33)和居里温度(TC)分别为507、292 pC/N和345 ℃), 最大Qm在120~160 ℃可达824, 比在室温下高62.52%, 而动态压电常数(d31)仅降低了3.85%。X射线衍射(XRD)和压电力显微镜结果表明, 随着温度升高, 陶瓷内部晶面间距增加, 电畴细化。热激励去极化电流结果表明, 缺陷偶极子在240 ℃以下保持稳定, 细畴附近的氧空位逐渐聚集, 并与温度稳定性良好的缺陷偶极子结合, 增加了对畴的钉扎作用, 导致Qm增加。本研究为压电陶瓷高温下高Qm的应用提供了一种可能性。

关键词: 缺陷偶极子, 温度特性, 氧空位, 机电性能, 机械品质因数, 硬化掺杂

Abstract:

The accepted doping ion in Ti4+-site of PbZryTi1-yO3 (PZT)-based piezoelectric ceramics is a well-known method to increase mechanical quality factor (Qm), since the acceptor coupled by oxygen vacancy becomes defect dipole, which prevents the domain rotation. In this field, a serious problem is that generally, Qm decreases as the temperature (T) increases, since the oxygen vacancies are decoupled from the defect dipoles. In this work, Qm of Pb0.95Sr0.05(Zr0.53Ti0.47)O3 (PSZT) ceramics doped by 0.40% Fe2O3 (in mole) abnormally increases as T increases, of which the Qm and piezoelectric coefficient (d33) at room temperature and Curie temperature (TC) are 507, 292 pC/N, and 345 ℃, respectively. The maximum Qm of 824 was achieved in the range of 120-160 ℃, which is 62.52% higher than that at room temperature, while the dynamic piezoelectric constant (d31) was just slightly decreased by 3.85%. X-ray diffraction (XRD) and piezoresponse force microscopy results show that the interplanar spacing and the fine domains form as temperature increases, and the thermally stimulated depolarization current shows that the defect dipoles are stable even the temperature up to 240 ℃. It can be deduced that the aggregation of oxygen vacancies near the fine domains and defect dipole can be stable up to 240 ℃, which pins domain rotation, resulting in the enhanced Qm with the increasing temperature. These results give a potential path to design high Qm at high temperature.

Key words: defect dipole, temperature characteristic, oxygen vacancy, electro-mechanical property, mechanical quality factor, hardening doping

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