Ar离子注入蓝宝石衬底诱导成核的高质量GaN外延

doi:10.15541/jim20240286

无机材料学报 ›› 2025, Vol. 40 ›› Issue (1): 91-96.DOI: 10.15541/jim20240286 CSTR: 32189.14.10.15541/jim20240286

Ar离子注入蓝宝石衬底诱导成核的高质量GaN外延

安瑕(), 许晟瑞(), 陶鸿昌, 苏华科, 杨赫, 许钪, 谢磊, 贾敬宇, 张进成, 郝跃

西安电子科技大学微电子学院, 西安 710071

收稿日期:2024-06-12 修回日期:2024-07-12 出版日期:2025-01-20 网络出版日期:2024-10-17
通讯作者: 许晟瑞, 教授. E-mail: srxu@xidian.edu.com
作者简介:安瑕(2000-), 女, 硕士研究生. E-mail: 2382744815@qq.com
基金资助:
国家自然科学基金(62074120);国家自然科学基金(62134006);国家重点研发计划(2022YFB3604400)

High Quality GaN Epitaxy Induced Nucleation by Ar Ion Implantation into Sapphire Substrate

AN Xia(), XU Shengrui(), TAO Hongchang, SU Huake, YANG He, XU Kang, XIE Lei, JIA Jingyu, ZHANG Jincheng, HAO Yue

School of Microelectronics, Xidian University, Xi’an 710071, China

Received:2024-06-12 Revised:2024-07-12 Published:2025-01-20 Online:2024-10-17
Contact: XU Shengrui, professor. E-mail: srxu@xidian.edu.com
About author:AN Xia (2000-), female, Master candidate. E-mail: 2382744815@qq.com
Supported by:
National Natural Science Foundation of China(62074120);National Natural Science Foundation of China(62134006);National Key R&D Program of China(2022YFB3604400)

摘要/Abstract

摘要：

氮化镓(GaN)薄膜通常是在异质衬底上获得的, 然而异质外延引入的高密度位错限制了其在高性能电子器件和光电器件中的发展。本研究采用Ar离子预处理蓝宝石衬底来实现诱导成核, 显著降低了GaN外延层中的位错密度。优化Ar离子的注入剂量发现, 当剂量为1×10¹¹ cm^-2时, 螺位错密度为5.26×10⁷ cm^-2, 刃位错密度为1.95×10⁸ cm^-2, 总位错密度比传统蓝宝石衬底上生长的GaN降低了65%。光致发光(Photoluminescence, PL)测试结果表明, 经过诱导成核的GaN外延层的光学性能有所提高, 与未注入的样品相比, PL强度最高提升了152%。本研究提出的Ar离子诱导成核技术是一种工艺简单、效果显著的方法, 可以提高异质外延GaN层晶体质量, 对实现高效率GaN基发光二极管(Light Emitting Diode, LED)和高性能电子器件具有重要意义。

关键词: GaN, 离子注入, 诱导成核, 外延

Abstract:

Gallium nitride (GaN) thin films are typically obtained on foreign substrates. Hetero-epitaxial growth of GaN leads to high density of threading dislocations, which poses a significant challenge to promote high-performance electronic device and photoelectric device based on these films. This research used Ar-ion implantation pretreatment on sapphire substrates to induce high-quality nucleation, reducing the dislocation density in GaN epitaxial layers. By optimizing the dosage of Ar ions, it was found that when the Ar ion dosage was 1×10¹¹ cm^-2, the screw dislocation density was 5.26×10⁷ cm^-2, and the edge dislocation density was 1.95×10⁸ cm^-2, the total dislocation density decreased by 65% compared to GaN grown on traditional sapphire substrate. Photoluminescence spectra realized that the optical performance of the GaN epitaxial layer with induced nucleation was also improved. In contrast to the untreated sample, the photoluminescence strength increased by 152%. Therefore, all above results indicate that the Ar ion induced nucleation technique proposed in this study is a simple and effective method that can be used to improve the crystal quality of GaN layers. This is of great significance for achieving high-efficiency GaN-based LEDs and high-performance electronic devices.

Key words: GaN, ion implantation, induced nucleation, epitaxy

中图分类号:

TM23

安瑕, 许晟瑞, 陶鸿昌, 苏华科, 杨赫, 许钪, 谢磊, 贾敬宇, 张进成, 郝跃. Ar离子注入蓝宝石衬底诱导成核的高质量GaN外延[J]. 无机材料学报, 2025, 40(1): 91-96.

AN Xia, XU Shengrui, TAO Hongchang, SU Huake, YANG He, XU Kang, XIE Lei, JIA Jingyu, ZHANG Jincheng, HAO Yue. High Quality GaN Epitaxy Induced Nucleation by Ar Ion Implantation into Sapphire Substrate[J]. Journal of Inorganic Materials, 2025, 40(1): 91-96.

图/表 7

图1 GaN外延结构

Fig. 1 GaN epitaxial structure

图2 样品在(002)/(102)晶面上的摇摆曲线

Fig. 2 Rocking curves of samples on the (002)/(102) crystal planes (a) (002); (b) (102). Colorful figures are available on website

表1 不同方法提高GaN薄膜晶体质量的结果对比

Table 1 Comparison of the results of different methods to improve the crystal quality of GaN thin film

Method	FWHM_(002)/(102)/arcsec	Total dislocation density/(×10⁸, cm^-2)	Ref.
Sputtered AlN NL	201/225	3.50	[21]
Al/Ti metal mask by ELOG	341/350	8.80	[22]
AlN NL by MBE	300/400	10.30	[23]
Al-ion implantation pretreatment on sapphire substrates	204/187	2.69	[17]
Ar-ion implantation pretreatment on sapphire substrates	161.9/191.7	2.47	This work

图3 样品的AFM形貌图

Fig. 3 AFM images of samples (a) Control sample; (b) Sample A; (c) Sample B; (d) Sample C

图4 样品的PL光谱图

Fig. 4 PL spectra of samples

图5 样品的Raman光谱

Fig. 5 Raman spectra of samples

图6 离子注入后蓝宝石衬底的AFM形貌

Fig. 6 AFM image of sapphire substrate with ion implantation

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Ar离子注入蓝宝石衬底诱导成核的高质量GaN外延

High Quality GaN Epitaxy Induced Nucleation by Ar Ion Implantation into Sapphire Substrate

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