无机材料学报

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KDP晶体柱面生长速率实时测量研究

刘 冰, 王圣来, 房昌水, 顾庆天, 孙 洵, 李毅平   

  1. 山东大学晶体材料国家重点实验室, 济南 250100
  • 收稿日期:2004-12-20 修回日期:2005-02-02 出版日期:2006-01-20 网络出版日期:2006-01-20

In Situ Measurement of the Prismatic Faces Growth Rate of KDP Crystal

LIU Bing, WANG Sheng-Lai, FANG Chang-Shui, GU Qing-Tian, SUN Xun, LI Yi-Ping   

  1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • Received:2004-12-20 Revised:2005-02-02 Published:2006-01-20 Online:2006-01-20

摘要: KDP晶体生长速率高精度地实时测量有助于研究各种因素对晶体生长的影响. 本文用激光偏振干涉法实现了对KDP晶体柱面生长速率和死区的实时测量, 精度达到0.01μm/min. 籽晶
尺寸等实验条件影响测量的结果, 小尺寸(约2mm×2mm)的晶体更有利于死区的表征, 溶解阶段造成的晶体表面位错坑是出现干扰测量的“异常”现象的根源.

关键词: KDP晶体, 死区, 生长速率, 实时测量

Abstract: The measurement of KDP crystal growth rate is helpful to study on the effect of various factors on the growth of KDP crystal. In situ precise measurement of crystal growth rate and dead zone of
KDP prismatic faces was achieved by using laser-polarization-interference technique. The experiment result is affected by various conditions such as crystal dimensions. It is found that the seed crystal
of small dimensions is in favor of token on the dead zone. The dislocation etch pits produced when the solution temperature is higher than supersaturation point are considered to cause the abnormal
phenomena disturbing the measurement.

Key words: KDP, dead zone, growth rate, in situ measurement

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