原子层沉积生长速率的控制研究进展

doi:10.3724/SP.J.1077.2014.13449

无机材料学报 ›› 2014, Vol. 29 ›› Issue (4): 345-351.DOI: 10.3724/SP.J.1077.2014.13449 CSTR: 32189.14.SP.J.1077.2014.13449

原子层沉积生长速率的控制研究进展

卢维尔¹, 董亚斌^{1, 2}, 李超波¹, 夏洋¹, 李楠¹

(1. 中国科学院微电子研究所, 微电子器件与集成技术重点实验室, 北京100029; 2. 中国科学院大学, 北京 100190 )

收稿日期:2013-09-05 修回日期:2013-10-18 出版日期:2014-04-20 网络出版日期:2014-03-24
基金资助:
中国科学院科研装备研制项目(Y3YZ028001)

Research Progress on Growth Rate Controlling of Atomic Layer Deposition

LU Wei-Er¹, DONG Ya-Bin^{1, 2}, LI Chao-Bo¹, XIA Yang¹, LI Nan¹

(1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Science, Beijing 100029, China; 2. University of Chinese Academy of Sciences, Beijing 100190, China)

Received:2013-09-05 Revised:2013-10-18 Published:2014-04-20 Online:2014-03-24
Supported by:
Scientific Research and Equipment Development Project, Chinese Academy of Sciences (Y3YZ028001)

摘要/Abstract

摘要： 原子层沉积生长技术(ALD)是以表面自限制化学反应为机制的薄膜沉积技术, 可以一层一层地生长薄膜。该技术具有生长温度低、沉积厚度精确可控、保形性好和均匀性高等优点, 逐渐成为制备薄膜材料最具发展潜力的薄膜生长技术。作为ALD技术中一个关键的指标——生长速率, 不仅对沉积所得薄膜的晶体质量、致密度起重要作用, 更重要的是影响集成电路的生产效率。本文综述了近年来ALD生长机制和生长速率方面的研究结果, 以及ALD技术生长速率的影响因素, 并分析探讨了提高和改善ALD生长速率的方法以及研究趋势。

关键词: 原子层沉积, 生长速率, 生长机制, 位阻效应

Abstract: Based on the self-limiting nature of sequential surface chemical reaction, atomic layer deposition (ALD) technique could grow films layer by layer. ALD has advantages of low growth temperature, precise thickness controllability, good conformity and uniformity. Therefore, it becomes a primary method for preparing thin films. As a key indicator of ALD technique, the growth rate of film plays an important role not only on the film quality and density, but also on the integrated circuit production efficiency. This paper reviews the recent research results of the ALD growth mechanism and rate, and the factors that affect the growth rate. Finally, this paper provides a summary and some research trends on improving and optimizing the ALD growth rate.

Key words: atomic layer deposition, growth rate, growth mechanism, steric hindrance

中图分类号:

TQ174

卢维尔, 董亚斌, 李超波, 夏洋, 李楠. 原子层沉积生长速率的控制研究进展[J]. 无机材料学报, 2014, 29(4): 345-351.

LU Wei-Er, DONG Ya-Bin, LI Chao-Bo, XIA Yang, LI Nan. Research Progress on Growth Rate Controlling of Atomic Layer Deposition[J]. Journal of Inorganic Materials, 2014, 29(4): 345-351.

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原子层沉积生长速率的控制研究进展

Research Progress on Growth Rate Controlling of Atomic Layer Deposition

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