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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

用VTE方法在蓝宝石衬底上生长γ-LiAlO2薄膜

李抒智, 徐军, 杨卫桥, 邹军, 周圣明   

  1. 中国科学院上海光学精密机械研究所, 上海 201800
  • 收稿日期:2003-12-10 修回日期:2004-02-16 出版日期:2005-01-20 网络出版日期:2005-01-20

γ-LiAlO2 Layer on (0001) Sapphire Fabricated by Vapor Transport Equilibration

LI Shu-Zhi, XU Jun, YANG Wei-Qiao, ZHOU Jun, ZHOU Sheng-Ming   

  1. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • Received:2003-12-10 Revised:2004-02-16 Published:2005-01-20 Online:2005-01-20

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摘要： 利用气相传输平衡技术(VTE)和后退火处理工艺在(0001)蓝宝石衬底上获得了高度[100]取向的γ-LiAlO2薄膜. X射线衍射表明是由单相的γ-LiAlO2
所组成. 此薄膜经850～900℃/120h空气中退火处理后显示出高度的[100]取向. 这一实验结果意味着有望通过VTE方法制备用于GaN基器件外延生长的γ-LiAlO2
(100)- Al2O3(0001)复合衬底.

关键词: GaN, 气相传输平衡技术(VTE), γ-LiAlO2, 蓝宝石

Abstract: Using vapor transport equilibration(VTE) technique and post-annealing processing, we succeeded in the fabrication of γ-LiAlO2 layer with a highly-preferred orientation of [100] on (0001) sapphire crystal. X-ray diffraction
indicates that the as-fabricated layer by VTE is a polycrystalline film shown to be a single-phase. When the γ-LiAlO2 layers are annealed at 850～900℃ for about 120 hours in air, the layers become highly textured with [100]
orientation. These results reveal the possibility of fabricating γ-LiAlO2 (100)// sapphires(0001) composite substrate for GaN-based epitaxial film by VTE.

Key words: GaN, vapor transport equilibration(VTE), γ-LiAlO2, sapphire

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