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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

MOD法制备的Pb0.985La0.01(Zr0.4Ti0.6)O3

马建华, 孟祥建, 孙兰璟, 褚君浩   

  1. 中国科学院上海技术物理研究所红外物理国家重点实验室, 上海, 200083
  • 收稿日期:2003-12-04 修回日期:2004-02-11 出版日期:2005-01-20 网络出版日期:2005-01-20

Crystallinity and Ferroelectricity of MOD-derived Pb0.985La0.01(Zr0.4Ti0.6)O3 Thin Films

MA Jian-Hua, MENG Xiang-Jian, SUN Jing-Lan, CHU Jun-Hao   

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • Received:2003-12-04 Revised:2004-02-11 Published:2005-01-20 Online:2005-01-20

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摘要： 采用金属有机分解法(MOD)在LNO(100)/Si衬底上制备了Pb0.985La0.01(Zr0.4Ti0.6)O3(PLZT)铁电薄膜. 在薄膜的快速退火过程中, 增加了一个中间温度预退火过程, 并研究了该过
程对薄膜晶型结构和铁电性能的影响. 结果发现, 中间温度预退火过程可以影响薄膜对晶型结构的选择. 没有中间温度预退火过程的薄膜, 显示出(100)择优取向; 而经中间温度预退火的
薄膜则表现为随机取向. 对薄膜铁电性能的研究表明, 没有中间温度预退火过程的薄膜的铁电性能较差, 经380℃预退火的薄膜显示出最佳的铁电性能. 晶型结构取向和缺陷是影
响PLZT薄膜铁电性能的两个主要因素.

关键词: PLZT薄膜, 中间温度预退火, 晶型结构, 铁电性能

Abstract: Pb0.985La0.01(Zr,Ti)O3(PLZT) thin films were deposited onto LNO(100)/Si substrates by metal-organic decomposition (MOD) technique. An intermediate pre-annealing process was added
into the rapid thermal anneal (RTA) process to treat the films. Effects of intermediate pre-annealing process on crystallinity and ferroelectricity were investigated. The results show that the intermediate
pre-annealing process can affect the selection of crystalline texture. PLZT thin film without intermediate pre-annealing process displays (100)-preferential orientation. However, PLZT thin films with intermediate
pre-annealing process show random orientation. PLZT thin film without intermediate pre-annealing process shows the worse ferroelectricity. PLZT thin film with intermediate pre-annealing process of 380℃
displays the best properties. The ferroelectricity is mainly attributed to both the crystallinity and the defects in the PLZT thin films.

Key words: PLZT thin films, intermediate pre-annealing process, crystallinity, ferroelectricity

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