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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

Nb5+掺杂与热处理对TiO2基材料气敏特性的影响

裴素华; 孙海波; 王强; 孙振翠; 石礼伟   

  1. 山东师范大学物理与电子科学学院半导体研究所 济南 250014
  • 收稿日期:2003-07-03 修回日期:2003-09-22 出版日期:2004-07-20 网络出版日期:2004-07-20

Effects of Heat Treatment and Doping of Nb5+ on Sensitivity Properties of TiO2-based Material

PEI Su-Hua; SUN Hai-Bo; WANG Qiang; SUN Zhen-Cui; SHI Li-Wei   

  1. Institute of Semiconductor; Shandong Normal University; Ji nan 250014; China
  • Received:2003-07-03 Revised:2003-09-22 Published:2004-07-20 Online:2004-07-20

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摘要： TiO2是响应三甲胺(TMA)气体最佳的金属氧化物半导体材料,为保持TiO2基TMA旁热式气敏器件具有较高灵敏度和较低空气阻值(Ra),相应降低器件加热功率RH,本文通过N2气氛高温退火、高价Nb5+掺杂和长时间烧结等方法,提高TiO2基敏感材料电导率获得成功。实验与理论证明:降低氧分压可增强TiO2自身半导化程度;掺入10％左右Nb2O5,Nb5+替代Ti4+形成固溶体,可使TiO2得到最佳半导化效果;采用长时间的烧结处理,促使Ti3+转化为Ti4+,进一步提高材料电导率和器件稳定性,从而为制造低阻、高灵敏度、高选择性动物食品测鲜传感器开辟了一条新途径。

关键词: TiO2, N2退火, Nb5+掺杂, 长时效烧结

Abstract: Titanium is a premium metal-oxide material sensitive to trimethylamine (TMA) gas. To obtain high
sensitivity and low power of elements, annealing in N2, doping with Nb5+ and long-time sintering were applied to improve the conductivity
of TiO2-based sensitive materials. It is concluded that low oxygen pressure can enhance self-semiconductorization. Doping with 10% Nb5+
that substitutes for Ti4+ and long-time sintering that promotes conversion from Ti3+ to Ti4+ can improve conductivity of material and
stability of elements. As a result, a new method is procured to make low-resistance sensor with high sensitivity and good selectivity.

Key words: TiO2, annealing in N2, doping with Nb5+, long-time sintering

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