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无机材料学报

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合成工艺对BiNbO4微波介质陶瓷的影响

姚尧; 赵梅瑜; 吴文骏; 王依琳   

  1. 中国科学院上海硅酸盐研究所; 上海 200050
  • 收稿日期:1997-09-24 修回日期:1997-10-20 出版日期:1998-08-10 网络出版日期:1998-08-10

Influence of Synthesizing Process on BiNbO4 Microwave Dielectric Ceramic

YAO Yao; ZHAO Mei-Yu; WU Wen-Jun; WANG Yi-Lin   

  1. Shanghai Institute of Ceramics; Chinese Academy of Sciences Shanghai 200050 China
  • Received:1997-09-24 Revised:1997-10-20 Published:1998-08-10 Online:1998-08-10

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摘要： 本文研究了BiNbO4粉料合成温度及烧结助剂CuO-V2O5添加程序对BiNbO4陶瓷烧结特性及微波介电性能的影响．结果表明：合成温度为850℃／2h及合成后加入烧结助剂CuO-V2O5的BiNbO4陶瓷有高的密度值、较为均匀的晶粒尺寸及良好的介电性能：在100MHz，εr＝49～52，在3GHz，εr＝44，Q＝2000～2300，τr＝38ppm（-40～25℃）；τr＝±6ppm（25～85℃）．

关键词: BiNbO4, 合成工艺, 微波介质陶瓷

Abstract: The influences of synthesizing process and CuO-V2O5 doping sequence on the sintering behaviour and dielectric properties were investigated. The experimental results indicate that BiNbO4ceramic prepared from the powder synthesized at 850℃ for 2h and doped with CuO-V2O5 thereafter possesses more homogenious grain size and high bulk density. The dielectric properties of the ceramic are εr = 49~52, tan δ≤0.001 (100MHz), εr = 44, Q = 2000~2300 (3GHz), τf = 38ppm(-40~25℃), τf = 16ppm(25~85℃).

Key words: BiNbO4, synthesizing process, microwave dielectric properties

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