掺镧BiFeO3薄膜的制备及光伏特性研究

doi:10.3724/SP.J.1077.2013.12298

无机材料学报 ›› 2013, Vol. 28 ›› Issue (4): 436-440.DOI: 10.3724/SP.J.1077.2013.12298 CSTR: 32189.14.SP.J.1077.2013.12298

掺镧BiFeO₃薄膜的制备及光伏特性研究

谢益骏, 郭益平, 董文, 郭兵, 李华, 刘河洲

(上海交通大学材料科学与工程学院, 金属基复合材料国家重点实验室, 上海 200240)

收稿日期:2012-05-08 修回日期:2012-07-18 出版日期:2013-04-10 网络出版日期:2013-03-20
作者简介:谢益骏(1990–), 男, 学士. E-mail: billyxieyi1990@gmail.com
基金资助:
国家自然科学基金(11074165)National Natural Science Foundation of China (11074165)

Preparation of La-doped BiFeO₃Thin Film and Its Photovoltaic Properties

XIE Yi-Jun, GUO Yi-Ping, DONG Wen, GUO Bing, LI Hua, LIU He-Zhou

(State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China)

Received:2012-05-08 Revised:2012-07-18 Published:2013-04-10 Online:2013-03-20
About author:XIE Yi-Jun. E-mail: billyxieyi1990@gmail.com

摘要/Abstract

摘要：

采用溶胶-凝胶法, 用乙二醇甲醚作溶剂溶解Bi(NO₃)₃、Fe(NO₃)₃和La(NO₃)₃制备前体溶液, 通过化学溶液沉积法在FTO导电玻璃基板上合成La³⁺掺杂的BiFeO₃(BFO)薄膜, 并研究了La³⁺掺杂对BiFeO₃的能带及其光伏性能的影响。BiFeO₃薄膜呈多晶钙钛矿结构, 且随着La³⁺掺杂量的增加, BiFeO₃的晶格常数依次递减。掺杂10% La³⁺的BiFeO₃的能隙比未掺杂时稍有减小, 为2.71 eV, 随着La³⁺掺杂量的增加, BiFeO₃的能隙增加到2.76 eV。采用改良法制备的La³⁺的掺杂量为10%的BiFeO₃薄膜的最大开路电压为0.4 V, 具有良好的光伏性能。

关键词: 溶胶-凝胶法, 铁酸铋, 开路电压, 镧掺杂

Abstract:

The La³⁺ doped BiFeO₃ (BFO) thin films were fabricated by Sol-Gel method. The precursor solution was synthesized by dissolving Bi(NO₃)₃, Fe(NO₃)₃ and La(NO₃)₃ in 2-methoxyethanol and BiFeO₃ thin films were grown by chemical solution deposition on fluorine doped tin oxide (FTO) glass substrate. The influence of La³⁺ doping on the band gap and photovoltaic properties of BiFeO₃ was studied. The BiFeO₃ thin films exhibited polycrystalline-phase perovskite structure. The lattice parameter of BiFeO₃ decreased with La³⁺ addition increasing. The band gap of BiFeO₃ doped with 10% La³⁺ doping was 2.71 eV, a little smaller than that of the undoped one. The bandgap of BiFeO₃ increased to 2.76 eV with the increase of La³⁺ doping. The maximal open circuit voltage of 10% La³⁺-doped BiFeO₃ prepared by modified method reached 0.4 V, showing good photovoltaic properties.

Key words: Sol-Gel method, bismuth ferrite, open circuit voltage, lanthanum doping

中图分类号:

TB34

谢益骏, 郭益平, 董文, 郭兵, 李华, 刘河洲. 掺镧BiFeO₃薄膜的制备及光伏特性研究[J]. 无机材料学报, 2013, 28(4): 436-440.

XIE Yi-Jun, GUO Yi-Ping, DONG Wen, GUO Bing, LI Hua, LIU He-Zhou. Preparation of La-doped BiFeO₃Thin Film and Its Photovoltaic Properties[J]. Journal of Inorganic Materials, 2013, 28(4): 436-440.

图/表 9

图1 不同La3+掺杂量的BFO薄膜的XRD图谱

Fig. 1 XRD patterns of BFO thin films doped with different contents of La3+

图2 (a)未掺杂和(b)掺杂10%La3+的BFO薄膜的SEM照片

Fig. 1 XRD patterns of BFO thin films with different

Fig. 2 SEM images of (a) undoped and (b) doped with 10% La3+ BFO films

图3 不同La3+掺杂量的BFO薄膜的光学透过率曲线

Fig. 3 Transmission spectra of BFO thin films doped with different contents of La3+

图4 不同La组分的BFO薄膜的能隙表征图

Fig. 4 Plots of (αhν)2 vs hν for BFO thin films doped with different contents of La3+

图5 不同La组分的BFO薄膜的J-V曲线

Fig. 5 J-V curves of BFO thin films doped with different contents of La3+

图6 改良法制备的BFO薄膜在暗场和明场下的J-V曲线

Fig. 6 J-V curve of BFO thin film using the modified method under dark and white light illumination

图7 改良法制备的BFO薄膜随光通断变化的j-t曲线

Fig. 7 Time dependence of zero bias photocurrent density with light ON and OFF of BFO thin film using the modified method

图1 不同La3+掺杂量的BFO薄膜的XRD谱

content of La3+ content of La3+

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掺镧BiFeO₃薄膜的制备及光伏特性研究

Preparation of La-doped BiFeO₃Thin Film and Its Photovoltaic Properties

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