钨掺杂二氧化钒薄膜的THz波段相变性能的研究

doi:10.3724/SP.J.1077.2012.12131

无机材料学报 ›› 2012, Vol. 27 ›› Issue (8): 891-896.DOI: 10.3724/SP.J.1077.2012.12131 CSTR: 32189.14.SP.J.1077.2012.12131

• 研究快报 • 上一篇

钨掺杂二氧化钒薄膜的THz波段相变性能的研究

毛茂¹, 黄婉霞¹, 张雅鑫², 颜家振¹, 罗轶¹, 施奇武¹, 蔡靖涵¹

(1. 四川大学材料科学与工程学院, 成都610064; 2. 电子科技大学物理电子学院, 成都610054)

收稿日期:2012-03-05 修回日期:2012-04-23 出版日期:2012-08-20 网络出版日期:2012-07-09
作者简介:毛茂. E-mail: maomaoscu@163.com
基金资助:
National Natural Science Foundation of China (61072036)

Study on Phase Transition Property of Tungsten-doped Vanadium Dioxide Thin Film at Terahertz Range

MAO Mao¹, HUANG Wan-Xia¹, ZHANG Ya-Xin², YAN Jia-Zhen¹, LUO Yi¹, SHI Qi-Wu¹, CAI Jing-Han¹

(1. College of Material Science and Engineering, Sichuan University, Chengdu 610064, China; 2. College of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China)

Received:2012-03-05 Revised:2012-04-23 Published:2012-08-20 Online:2012-07-09
About author:MAO Mao(1985–), candidate of master degree. E-mail: maomaoscu@163.com
Supported by:
National Natural Science Foundation of China (61072036)

摘要/Abstract

摘要： 通过溶胶–凝胶法制备纯的VO₂和W掺杂的VO₂薄膜, 并且进行了XPS、AFM和XRD的分析与表征, 并观察了其微观形貌和结构. 同时研究了VO₂和W掺杂VO₂在红外光谱(λ=4 μm)和THz(0.3~1.0 THz)区域的金属–绝缘转变性能. 结果表明: 室温下W掺杂的VO₂薄膜在红外和THz区域的初始透过率都比纯的VO₂薄膜低. 在THz波段, W掺杂的VO₂表现出更低的相变温度. 同时在VO₂和W掺杂VO₂相变过程中, 观察到了金属–绝缘转变和结构转变的现象, W掺杂VO₂具有明显的峰位偏移现象.

关键词: 二氧化钒, 红外透过率, 太赫兹, 钨掺杂

Abstract: Vanadium dioxide and tungsten-doped (W-doped) vanadium dioxide thin films deposited by aqueous Sol-Gel method were characterized with several different techniques (i.e. X-ray photoelectron spectroscope, atomic force microscope, X-ray diffraction), to determine their morphology and microstructure. Their metal-to-insulator (MIT) phase transition behavior in infrared spectral region (λ=4 μm) and terahertz (THz) spectral region (0.3–1.0 THz) were observed respectivele. The results demonstrate that the transmittance of W-doped VO₂ film at room temperature is visibly lower than that of undoped VO₂ film in both infrared and terahertz spectral region. The transition temperature of W-doped VO₂ film is also lower than that of undoped VO₂ film in the THz range. The MIT and structural phase transition (SPT) are observed during the phase transition of VO₂and W-doped VO₂, and an obvious change of peak position occurs in W-doped VO₂ film.

Key words: vanadium dioxide, infrared transmittance, terahertz, tungsten doped

中图分类号:

TB34

毛茂, 黄婉霞, 张雅鑫, 颜家振, 罗轶, 施奇武, 蔡靖涵. 钨掺杂二氧化钒薄膜的THz波段相变性能的研究[J]. 无机材料学报, 2012, 27(8): 891-896.

MAO Mao, HUANG Wan-Xia, ZHANG Ya-Xin, YAN Jia-Zhen, LUO Yi, SHI Qi-Wu, CAI Jing-Han. Study on Phase Transition Property of Tungsten-doped Vanadium Dioxide Thin Film at Terahertz Range[J]. Journal of Inorganic Materials, 2012, 27(8): 891-896.

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钨掺杂二氧化钒薄膜的THz波段相变性能的研究

Study on Phase Transition Property of Tungsten-doped Vanadium Dioxide Thin Film at Terahertz Range

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