溶剂熔区移动法生长Cd0.9Zn0.1Te晶体的工艺优化研

doi:10.15541/jim20160658

无机材料学报 ›› 2017, Vol. 32 ›› Issue (9): 980-984.DOI: 10.15541/jim20160658 CSTR: 32189.14.10.15541/jim20160658

溶剂熔区移动法生长Cd_0.9Zn_0.1Te晶体的工艺优化研

凌云鹏, 闵嘉华, 梁小燕, 张继军, 杨柳青, 温旭亮, 张滢, 李明, 刘兆鑫, 王林军, 沈悦

(上海大学电子信息材料系, 上海 200444)

收稿日期:2016-11-28 修回日期:2017-01-08 出版日期:2017-09-30 网络出版日期:2017-08-29
作者简介:凌云鹏(1992–), 男, 硕士. E-mail: lypshu@163.com;1244798988@qq.com
基金资助:
国家自然科学基金(11505109, 11675099, 11275122);上海市科委重点项目(11530500200, 15520500200);上海市教育委员会科研创新项目(12ZZ096);上海市教育委员会重点学科基金(S30107)

Process Parameters Optimization for Cd_0.9Zn_0.1Te Crystal Grown by Traveling Heater Metho

LING Yun-Peng, MIN Jia-Hua, LIANG Xiao-Yan, ZHANG Ji-Jun, YANG Liu-Qing, WEN Xu-Liang, ZHANG Ying, LI Ming, LIU Zhao-Xin, WANG Lin-Jun, SHEN Yue

(Department of Electronic Information Materials, Shanghai University, Shanghai 200444, China)

Received:2016-11-28 Revised:2017-01-08 Published:2017-09-30 Online:2017-08-29
About author:LING Yun-Peng. E-mail: lypshu@163.com;1244798988@qq.com
Supported by:
National Natural Science Foundation of China (11505109, 11675099, 11275122);Science and Technology Commission of Shanghai, China (11530500200, 15520500200);Innovation Program of Shanghai Municipal Education Commission, China (12ZZ096);Shanghai Leading Academic Discipline Project of Shanghai Municipal Education Commission (S30107)

摘要/Abstract

摘要：

为了解决Cd_0.9Zn_0.1Te(CZT)晶体生长温度高、单晶率低、成分不均匀等问题, 采用溶剂熔区移动法(THM)在优化工艺参数下生长了掺In的CZT晶体, 在优化晶体的生长温度、固液界面处的温度梯度、原位退火过程等生长条件后, 生长出直径为45 mm的低Te夹杂浓度、高电阻率、高透过率、均匀的高质量CZT晶体。 X射线衍射结果显示, 晶体的结晶性较好、Zn成分轴向偏析小。红外透过光谱测试结果显示, 晶体内部的杂质、缺陷水平相对较少, 晶体整体的红外透过率在60%左右。紫外-可见光吸收光谱测试结果也进一步表明, 晶体的均匀性良好。采用红外显微镜对晶体内部的Te夹杂形貌及其尺寸进行观察, 结果表明Te夹杂的尺寸主要分布在0~10 μm之间。采用直流稳态光电导技术测得电子的迁移率寿命积约为8×10^-4cm²/V。

关键词: 溶剂熔区移动法, Cd0.9Zn0.1Te, 红外透过率, 直流稳态光电导

Abstract:

To overcome the shortages of high growth temperature, low single crystal ratio and inhomogeneous composition of Cd_0.9Zn_0.1Te(CZT) crystal growth, the In-doped CZT crystal was grown by traveling heater method through optimized growth process parameters. High quality CZT crystals with diameter of 45 mm were grown after optimizing crystal growth temperature, temperature gradient at solid-liquid interface and in-situ annealing process, which had high resistivity, high transmittance, excellent uniformity, and low concentration of Te inclusions. Moreover, the patterns of wafer and powder X-ray diffraction showed that the crystallinity and the segregation of CZT were improved. Infrared transmittance spectra indicated that the level of impurities and defects was low in the crystal and the overall infrared transmittance of the crystal was about 60%. And UV-visible light absorption spectrum presented good uniformity of the crystal. Te inclusions in the crystal were observed by Infrared microscope, and it was found that Te inclusions were mainly distributed between 0-10 μm. In addition, mobility-life product for electrons of the crystal obtained was 8×10^-4cm²/V by direct current photoconductivity technique.

Key words: traveling heater method, Cd0.9Zn0.1Te, infrared transmittance, direct current photoconductivity

中图分类号:

TQ174

凌云鹏, 闵嘉华, 梁小燕, 张继军, 杨柳青, 温旭亮, 张滢, 李明, 刘兆鑫, 王林军, 沈悦. 溶剂熔区移动法生长Cd_0.9Zn_0.1Te晶体的工艺优化研[J]. 无机材料学报, 2017, 32(9): 980-984.

LING Yun-Peng, MIN Jia-Hua, LIANG Xiao-Yan, ZHANG Ji-Jun, YANG Liu-Qing, WEN Xu-Liang, ZHANG Ying, LI Ming, LIU Zhao-Xin, WANG Lin-Jun, SHEN Yue. Process Parameters Optimization for Cd_0.9Zn_0.1Te Crystal Grown by Traveling Heater Metho[J]. Journal of Inorganic Materials, 2017, 32(9): 980-984.

图/表 8

图1 THM法生长的CZT晶体的外观形貌图

Fig. 1 CZT crystal appearance grown by THM method

图2 不同轴向位置晶体粉末的XRD图谱

Fig. 2 XRD patterns of CZT crystal powder distributed in different axial positions

图3 典型CZT晶片的XRD图谱

Fig. 3 Typical XRD pattern of CZT crystal wafer

图4 不同轴向位置晶片的红外透过光谱

Fig. 4 Infrared transmission spectrum of CZT wafers distributed in different axial positions

图5 不同轴向位置晶片的紫外-可见光吸收光谱

Fig. 5 Ultraviolet light-visible light absorption spectrums distributed in different axial positions

图6 CZT晶体典型红外显微图像

Fig. 6 Typical infrared microscopic image for CZT crystal

图7 CZT晶体在黑暗条件下的I-V特性曲线

Fig. 7 I-V curve of CZT wafer tested in darkness

图8 通过Hecht公式拟合的电子及空穴的归一化光电流随电压的变化曲线

Fig. 8 Normalized photocurrent-voltage curves of electron and hole fitted by Hecht formula

参考文献 19

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溶剂熔区移动法生长Cd_0.9Zn_0.1Te晶体的工艺优化研

Process Parameters Optimization for Cd_0.9Zn_0.1Te Crystal Grown by Traveling Heater Metho

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溶剂熔区移动法生长Cd0.9Zn0.1Te晶体的工艺优化研

Process Parameters Optimization for Cd0.9Zn0.1Te Crystal Grown by Traveling Heater Metho

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溶剂熔区移动法生长Cd_0.9Zn_0.1Te晶体的工艺优化研

Process Parameters Optimization for Cd_0.9Zn_0.1Te Crystal Grown by Traveling Heater Metho