原子层淀积 Al2O3薄膜的热稳定性研究

doi:10.3724/SP.J.1077.2006.01217

无机材料学报

原子层淀积 Al₂O₃薄膜的热稳定性研究

卢红亮, 徐敏, 丁士进, 任杰, 张卫

复旦大学微电子学系ASIC与系统国家重点实验室, 上海 200433

收稿日期:2005-09-12 修回日期:2005-11-18 出版日期:2006-09-20 网络出版日期:2006-09-20

Thermal Stability of Atomic Layer Deposition Al₂O₃ Thin Films

LU Hong-Liang, XU Min, DING Shi-Jin, REN Jie, ZHANG Wei

Department of Microelectronics, ASIC and System State Key laboratory,
Fudan University, Shanghai 200433, China

Received:2005-09-12 Revised:2005-11-18 Published:2006-09-20 Online:2006-09-20

摘要/Abstract

摘要： 以Al(CH₃)₃和H₂O为反应源, 在270℃用原子层淀积(ALD)技术在Si衬底上生长了Al₂O₃薄膜. 采用X射线衍射(XRD)、X射线光电子能谱(XPS)、原子力显微镜(AFM)和傅立叶变换红外光谱(FTIR)等分析手段对Al₂O₃薄膜的热稳定性进行了研究. 结果表明刚淀积的薄膜中含有少量Al--OH基团, 高温退火后, Al--OH基团几乎消失, 这归因于Al--OH基团之间发生反应而脱水. 退火后的薄膜中O和Al元素的相对比例(1.52)比退火前的(1.57)更接近化学计量比的Al₂O₃. FTIR分析表明, 在刚淀积的Al₂O₃中有少量的--C ₃存在, --CH₃含量会随热处理温度的升高而减少. 此外, 在高温快速热退火后, Al₂O₃薄膜的表面平均粗糙度(RMS)明显改善, 900℃热退火后其RMS达到1.15nm.

关键词: Al2O3薄膜, 原子层淀积(ALD), X射线光电子能谱(XPS)

Abstract: Al₂O₃ thin films were grown by atomic layer deposition using trimthylaluminum
(TMA) and water (H₂O) as precursors at 270℃. Thermal stability of the Al₂O₃ film was explored by using X-ray diffraction, X-ray photoemission spectroscopy, Fourier transform infrared spectroscopy and atomic force microscopy. The results indicated that a small quantity of Al--OH groups existed in the as-deposited samples, and almost disappeared after rapid thermal annealing (RTA) at 600℃ or higher. The O/Al ratio in the as deposited film was 1.57. And the ratio decreased to 1.52 in the RTA treated film, as expected in the case of stoichiometric Al₂O₃. FTIR spectroscopic revealed that there were also the presence of --CH₃species in the as-deposited films. The amount of --CH₃ species decreased as annealing temperature increasing. In addition, after high temperatures RTA, the surface roughness of the Al₂O₃ films improved obviously, its RMS approached 1.15nm after 900℃ RTA.

Key words: Al2O3 thin film, atomic layer deposition, X-ray photoemission spectroscopy (XPS)

中图分类号:

O484
TN305

卢红亮,徐敏,丁士进,任杰,张卫. 原子层淀积 Al₂O₃薄膜的热稳定性研究[J]. 无机材料学报, DOI: 10.3724/SP.J.1077.2006.01217.

LU Hong-Liang,XU Min,DING Shi-Jin,REN Jie,ZHANG Wei. Thermal Stability of Atomic Layer Deposition Al₂O₃ Thin Films[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2006.01217.

参考文献

[1] Suntola T. Mater. Sci. Rep., 1989, 4: 261--312.
[2] Leskela M, Ritala M. Thin Solid Films, 2002, 409: 138--146.
[3] Kim H. J. Vac. Sci. Technol. B, 2003, 21(6): 2231--2261.
[4] Wilk G D, Wallance R M, Anthony J M. J. Appl. Phys., 2001, 89(10): 5243--5275.
[5] Kohara T, Tamagaki H, Ikari Y, et al. Surf. Coat. Technol., 2004, 185(2--3): 166--171.
[6] Serna R, Jimenez de Castro M, Chaos J A, et al. Appl. Phys. Lett., 1999, 75(26): 4073--4075.
[7] Zborowski J T, Golding T D, Forrest R L, et al. J. Vac. Sci. Technol. B, 1998, 16(3): 1451--1455.
[8] 黄肖容, 黄仲涛(Huang Xiao-Rong, et al). 无机材料学报(Journal of Inorganic
Materials), 1998, 13(4): 534--540.
[9] Whangbo S W, Choi Y K, Chung K B, et al. J. Vac. Sci. Technol. A, 2001, 19(2): 410--413.
[10] Klein T M, Niu D, Epling W S, et al. Appl. Phys. Lett., 1999, 75(25): 4001--4003.
[11] Gotoh M, Sudoh K, Itoh H, et al. Appl. Phys. Lett., 2002, 81(3): 430--432.
[12] Meyer D C, Levin A A, Paufler P, et al. Thin Solid Films, 2005, 489: 5--16.
[13] Renault O, Gosset L G, Rouchon D, et al. J. Vac. Sci. Technol. A, 2002, 20(6): 1867--1876.
[14] Gosset L G, Damlenecourt J-F, Renault O, et al. J. Non-Cryst. Solids, 2002, 303: 17--23.
[15] Yun S J, Lee K-H, Skarp J, et al. J. Vac. Sci. Technol. A, 1997, 15(6): 2993--2997.
[16] Damlenecourt J-F, Renault O, Chabli A, et al. J. Mater. Sci.: Mater. Electron., 2003, 14: 379--382.
[17] Puurunen R L, Root A, Haukka S, et al. J. Phy. Chem. B, 2000, 104(28): 6599--6609.
[18] Lakomaa E-L, Root A, Suntola T. Appl. Surf. Sci., 1996, 107: 107--115.
[19] Frank M M, Chab Y J, Wilk G D. Appl. Phys. Lett., 2003, 82(26): 4758--4760.
[20] Wang S L, Johnston C T, Bish D L, et al. J. Colloid Interface Sci., 2003, 260(1): 26--35.
[21] Maruyama T, Nakai T. Appl. Phys. Lett., 1991, 58(19): 2079--2081.
[22] Chowhuri A R, Takoudis C G, Klie R F, et al. Mat. Res. Soc. Symp. Proc., 2003, 747: V6.4.1--V6.4.6.
[23] Frank M M, Chabal Y J, Green M L, et al. Appl. Phys. Lett., 2003, 83(4): 740--742.
[24] Afanas’ev V V, Stesmans A, Mrstik B J, et al. Appl. Phys. Lett., 2002, 81(9): 1678--1680.

原子层淀积 Al₂O₃薄膜的热稳定性研究

Thermal Stability of Atomic Layer Deposition Al₂O₃ Thin Films

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