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无机材料学报

无机材料学报

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用于电子和光电子器件的非层状二维Bi2WO6的一步法合成

曲开瑞, 李林芸, 陈翔, 曾海波   

  1. 南京理工大学 材料科学与工程学院,新型显示材料与器件工信部重点实验室,南京 210094
  • 收稿日期:2026-01-17 修回日期:2026-02-04
  • 通讯作者: 陈翔, 教授. E-mail: xiangchen@njust.edu.cn; 曾海波, 教授. E-mail: zeng.haibo@njust.edu.cn
  • 作者简介:曲开瑞(1997-), 男, 博士研究生. E-mail: qukr@njust.edu.cn

One-step Synthesis of Non-layered 2D Bi2WO6 Nanosheets for Electronics and Optoelectronics

QU Kairui, LI Linyun, CHEN Xiang, ZENG Haibo   

  1. MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
  • Received:2026-01-17 Revised:2026-02-04
  • Contact: CHEN Xiang, professor. E-mail: xiangchen@njust.edu.cn; ZENG haibo, professor. E-mail: zeng.haibo@njust.edu.cn
  • About author:QU Kairui (1997-), male, PhD candidate E-mail: qukr@njust.edu.cn
  • Supported by:
    National Natural Science Foundation of China (52372152, 92064007, U24A20286, 52131304, 62261160392); National Key R&D Program of China (2024YFB3612400); Natural Science Foundation of Jiangsu Province (BZ2024038, BK20190476)

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摘要： 自石墨烯被发现以来,二维材料一直都是研究热点。二维半导体材料具有原子级厚度和优异的光电性能,被认为是理想的半导体材料。在材料晶体结构数据库中,范德华材料只占5%,导致可研究的二维材料数量稀少,这限制了二维材料的发展和应用。非范德华二维材料的开发将极大地丰富了二维半导体材料家族。非范德华材料的二维方向生长仍然是一个巨大的挑战,常规合成方法难以限制其在三维方向的生长。本研究开发了一种一步法化学气相沉积,在C面蓝宝石上生长了非范德华二维Bi2WO6纳米片,平均尺寸达到60 μm。并通过精确控制生长参数,实现了二维Bi2WO6纳米片的厚度调控。Bi2WO6纳米片被用于构建顶栅FET,其开关比高达106,载流子迁移率达到2.4 cm2∙V-1∙s-1。本研究还构建了光电探测器,实现了高达3.6×1010的比探测率,响应度为0.779A∙W-1,EQE为218.5%。本研究表明,二维Bi2WO6有望成为未来电子和光电子器件的理想材料。

关键词: Bi2WO6, 二维半导体, 化学气相沉积, 场效应晶体管, 光电探测器

Abstract: Since the discovery of graphene, two-dimensional (2D) materials have been a research hotspot. 2D semiconductor materials, with their atomic-level thickness and excellent electronic and optoelectronic properties, are considered ideal semiconductor materials. However, van der Waals materials account for only 5% of the crystal structure database, resulting in a limited number of 2D materials to be studied, which restricts their development and application. The development of non-van der Waals 2D materials will greatly enrich the family of 2D semiconductor materials. However, the two-dimensional growth of non-van der Waals materials remains a significant challenge, as conventional synthesis methods struggle to limit their growth in three dimensions. This study developed a one-step chemical vapor deposition method to grow non-van der Waals 2D Bi2WO6 nanosheets on C-plane sapphire with an average size of 60 μm. Furthermore, the thickness of the 2D Bi2WO6 nanosheets was precisely controlled by adjusting the growth parameters. The Bi2WO6 nanosheets were used to construct a top-gate FET, achieving an on/off ratio as high as 106 and a carrier mobility of 2.4 cm2∙V-1∙s-1. This study also constructed a photodetector that achieved a specific detectivity of up to 3.6 × 1010, a responsivity of 0.779 A·W-1, and an EQE of 218.5%. This research demonstrates that 2D Bi2WO6 holds promise as an ideal material for future electronic and optoelectronic devices.

Key words: Bi2WO6, 2D semiconductor, chemical vapor deposition, field-effect transistors, photodetectors

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