ZnSe单晶CVT法生长与系统优化

doi:10.3724/SP.J.1077.2008.00855

无机材料学报

ZnSe单晶CVT法生长与系统优化

刘长友, 介万奇

(西北工业大学材料学院, 西安 710072)

收稿日期:2007-07-04 修回日期:2007-12-19 出版日期:2008-07-20 网络出版日期:2008-07-20

Thermodynamic Analysis and CVT Growth of ZnSe Single Crystal

LIU Chang-You, JIE Wan-Qi

(College of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China)

Received:2007-07-04 Revised:2007-12-19 Published:2008-07-20 Online:2008-07-20

摘要/Abstract

摘要： 采用热力学数值计算的方法, 分析了ZnSe-I₂、H₂、HCl和NH₄Cl化学气相输运系统的特性. 对比计算结果表明, ZnSe-NH₄Cl系统具有压力高、输运反应焓变适中的特点. NH₃分解产生的H₂起着调节输运组分H₂Se分压的作用. 以ZnSe-I₂输运系统中实际输运组分分压值为参考, 确定了ZnSe-NH₄Cl系统中单晶生长工艺参数范围: 温度在1000℃左右, NH₄Cl的浓度范围在0.5~1.0mg/mL之内. 采用该工艺生长了尺寸约为8mm×6mm×4mm的ZnSe单晶, 生长态(111)面摇摆曲线半峰宽为60.48’’, 蚀坑密度(EPD)为(4.5~5.0)×10⁴/cm².

关键词: 硒化锌, 气相输运反应, 热力学分析

Abstract: The thermodynamic properties of transporting reactions in ZnSe-I₂, -H₂, -HCl and -NH₄Cl chemical vapor transport systems were analyzed by solving sets of equations with numerical methods. The results show that ZnSe-NH₄Cl system has the properties of high total pressure and moderate reaction enthalpy change. The hydrogen (H₂) produced through decomposition of NH₃ is capable to adjust the transporting component partial pressure of H₂Se. Referring to the component partial pressure in ZnSe-I₂system, the process parameters in ZnSe-NH₄Cl system are primarily selected for ZnSe single crystal growth. The concentration of NH₄Cl ranges from 0.5 to 1.0mg/mL at the growth temperature of about 1000℃. An as-grown ZnSe single crystal is obtained
with dimension of 8mm×6mm×4mm. The full width at half maximum of X-ray double crystals rocking curve on (111) as-grown surface is 60.48’’ and the etching pits density (EPD) is about (4.5--5.0)×10⁴/cm².

Key words: zinc selenide, chemical vapor transporting reaction, thermodynamic analysis

中图分类号:

刘长友,介万奇. ZnSe单晶CVT法生长与系统优化[J]. 无机材料学报, DOI: 10.3724/SP.J.1077.2008.00855.

LIU Chang-You,JIE Wan-Qi. Thermodynamic Analysis and CVT Growth of ZnSe Single Crystal[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2008.00855.

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ZnSe单晶CVT法生长与系统优化

Thermodynamic Analysis and CVT Growth of ZnSe Single Crystal

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