Journal of Inorganic Materials ›› 2018, Vol. 33 ›› Issue (8): 903-908.DOI: 10.15541/jim20170420

• Orginal Article • Previous Articles     Next Articles

Influence of Proton Irradiation on Defect and Magnetism of Yb-doped ZnO Dluted Magnetic Semiconductor Thin Films

CHEN Wei-Bin1, 2, LIU Xue-Chao1, ZHUO Shi-Yi1, CHAI Jun1, 2, SHI Er-Wei1   

  1. 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
    2. University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2017-08-30 Revised:2017-12-16 Online:2018-08-28 Published:2018-07-17
  • About author:CHEN Wei-Bin. E-mail:
  • Supported by:
    National Natural Science Foundation of China (51602331);National Key Research and Development Program of China (2016YFB0400401, 2017YFB0405700)


Yb-doped ZnO thin films were prepared by inductively coupled plasma enhanced physical vapor deposition method, the as-deposited Zn0.985Yb0.015O thin films were irradiated by proton with different doses. X-ray diffraction, X-ray photoelectron spectroscopy, positron annihilation spectroscopy, and magnetic property measurement were used to study the defect and ferromagnetism. The magnetic property measurement results indicate that the saturation magnetization of Zn0.985Yb0.015O thin films increases with the increment of irradiation doses, and reaches the maximum value at 6×1015 ions/cm2. With the further increase in irradiation doses, the saturation magnetization decreases. The positron annihilation measurement reveals that Zn vacancy-related defects dominate in proton irradiated Zn0.985Yb0.015O thin films. It is found that dependency of saturation magnetization on irradiation doses exhibits the same behavior with the amount of Zn vacancy-related defects on irradiation doses. It is experimentally demonstrated that the ferromagnetism of proton irradiated Yb-doped ZnO thin films is mainly influenced by Zn vacancy- related defects.


Key words: Yb-doped ZnO, proton irradiation, diluted magnetic semiconductor, ferromagnetism

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