Journal of Inorganic Materials ›› 2016, Vol. 31 ›› Issue (11): 1219-1222.DOI: 10.15541/jim20150023

• Orginal Article • Previous Articles     Next Articles

Dieletric and Ferroelctric Properties of Ba(Zr0.15Ti0.85)O3 Thick Film

ZHANG Ying –Tang1,2, YAN Qian2   

  1. (1. Department of Electrical Engineering, Henan Institute of Technology, Xinxiang453003 China; 2. School of Material Science & Engineering, Shaanxi University of Technology, Hanzhong 723003, China)
  • Received:2016-01-07 Revised:2016-06-21 Online:2016-11-10 Published:2016-10-25
  • Supported by:
    China Postdoctoral Science Foundation (2015M572541), State Key Laboratory of Electrical Insulation and Power Equipment (EIPE11207), State Key Laboratory Breeding Base of Dielectrics Engineering (DE2011A01)


Ba(Zr0.15Ti0.85)O3 (BZT) thick film was prepared by a tape-casting technique and its morphology was characterized by scanning electron microscope (SEM). Its dielectric and ferroelectric properies were investigated using LCR meter and Sawyer-Tower circuit. The results indicate that there is obvious dielectric relaxation behavior in BZT thick film. Its breakdown field strength, saturated polarization and remnant polarization are 60 kV/cm, 58.1 μC/ cm2 and 20.9 μC/cm2, respectively.

Key words: BZT, thick film, dielectric relaxation behavior

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