Journal of Inorganic Materials ›› 2016, Vol. 31 ›› Issue (11): 1219-1222.doi: 10.15541/jim20150023

• Orginal Article • Previous Articles     Next Articles

Dieletric and Ferroelctric Properties of Ba(Zr0.15Ti0.85)O3 Thick Film

Ying-Tang ZHANG1,2(), Qian YAN2   

  1. 1. Department of Electrical Engineering, Henan Institute of Technology, Xinxiang 453003, China
    2. School of Material Science & Engineering, Shaanxi University of Technology, Hanzhong 723001, China
  • Received:2016-01-07 Revised:2016-06-21 Online:2016-11-10 Published:2016-10-25
  • Supported by:
    China Postdoctoral Science Foundation (2015M572541), State Key Laboratory of Electrical Insulation and Power Equipment (EIPE11207), State Key Laboratory Breeding Base of Dielectrics Engineering (DE2011A01)

Abstract:

Ba(Zr0.15Ti0.85)O3 (BZT) thick film was prepared by a tape-casting technique and its morphology was characterized by scanning electron microscope (SEM). Its dielectric and ferroelectric properies were investigated using LCR meter and Sawyer-Tower circuit. The results indicate that there is obvious dielectric relaxation behavior in BZT thick film. Its breakdown field strength, saturated polarization and remnant polarization are 60 kV/cm, 58.1 μC/ cm2 and 20.9 μC/cm2, respectively.

Key words: BZT, thick film, dielectric relaxation behavior

CLC Number: 

  • TB34