Effects of Pressure and Rotation Speed on the Growth Rate and Uniformity of SiC in a Vertical Hot-wall CVD Epitaxial System
LI Xiaolei, QI Xiaofang, MA Wencheng, XU Yongkuan
Journal of Inorganic Materials . 2026, (10): 1459 -1469 .  DOI: 10.15541/jim20260067