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ISSN:1000-324X CN:31-1363/TQ
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Journal of Inorganic Materials
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中文
Dual-gate IGZO-based Neuromorphic Transistors with Stacked Al
2
O
3
/Chitosan Gate Dielectrics
WANG Jingyu, WAN Changjin, WAN Qing
Journal of Inorganic Materials . 2023, (
4
): 445 -451 . DOI: 10.15541/jim20220767
