Carbon nanotubes and Ga-doped carbon nanotubes were synthesized by
pyrolysis and then purified. Thin films of the purified samples were fabricated
by a screen-printing method. Field emission properties of these films were
studied. It was shown that the turn-on field of carbon nanotubes and Ga-doped carbon nanotubes was 2.22V/μm and 1.0V/μm, and the current densities were 400μA/cm2 and 4000μA/cm2 for carbon nanotubes and Ga-doped carbon nanotubes at applied fields 2.4V/μm. The electron field emission properties of the gallium-doped nanotubes were much better than those of carbon nanotubes. Mechanisms of field emission of gallium-doped nanotubes were explained.
LIU Kun
,
CHAO Ming-Ju
,
LI Hua-Yang
,
LIANG Er-Jun
. Comparison of Field Emission in Carbon Nanotubes and Gallium-doped Carbon Nanotubes[J]. Journal of Inorganic Materials, 2007
, 22(1)
: 181
-184
.
DOI: 10.3724/SP.J.1077.2007.00181
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