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Journal of Inorganic Materials

Journal of Inorganic Materials >

2009 , Vol. 24 >Issue 3: 559 - 562

DOI: https://doi.org/10.3724/sp.j.1077.2009.00559

Research Paper

Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE

  • WANG Bao-Zhu ,
  • WANG Xiao-Liang
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  • 1. Institute of Information Science and Engineering, Hebei University of Science and Technology, Shijiazhuang 050018, China; 2. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received date: 2008-08-11

  Revised date: 2008-09-18

  Online published: 2009-05-20

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Abstract

AlInGaN quaternary alloys were successfully grown on sapphire substrate by radiofrequency plasmaexcited molecular beam epitaxy (RF-MBE). AlInGaN quaternary alloys with different compositions were acquired by changing the Al cell’s temperature. The streaky RHEED patterns were observed during AlInGaN quaternary alloys growth. Scanning Electron Microscope (SEM), Rutherford backscattering spectrometry (RBS), X-Ray diffraction (XRD) and Cathodoluminescence (CL) were used to characterize the structural and optical properties of the AlInGaN alloys. The experimental results show that the AlInGaN quaternary alloys grow on the GaN buffer in the layerbylayer growth mode. When the Al cell’s temperature is 920℃, the Al/In ratio in the AlInGaN quaternary alloys is about 4.7，and the AllnGaN can acquire better crystal and optical quality. The X-ray and CL fullwidth at halfmaximum (FWHM) of the AlInGaN are 5arcmin and 25nm, respectively.

Key words： AlInGaN; RF-MBE; structural properties; optical properties

Cite this article

WANG Bao-Zhu , WANG Xiao-Liang . Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE[J]. Journal of Inorganic Materials, 2009 , 24(3) : 559 -562 . DOI: 10.3724/sp.j.1077.2009.00559

References

1］Knauer A, Wenzel H, Kolbe T,et al. Appl. Phys. Lett.,2008,92(19): 191912-191914.
［2］Fujikawa S, Takano T, Kondo Y, et al. Jpn. J. Appl. Phys., 2008, 47(4):2941-2944.
［3］Kuo CH, Feng HC, Kuo CW, et al. Appl. Phys. Lett., 2007,90(14):142115-142117.
［4］Nagamatsu K, Okada N, Sugimura H, et al. J. Crystal Growth, 2007,310(7-9): 2326-2329.
［5］潘孝军，张振兴，贾 璐，等（PAN XiaoJun，et al）.无机材料学报（Journal of Inorganic Materials），2007，22（7）：725-728.
［6］Shatalov M, Chitnis A, Adivarahan V, et al. Appl. Phys. Lett., 2001,78(6): 817-819.
［7］Hirayama H. J.Appl.Phys.,2005, 97(9):091101-091119.
［8］Matsuoka T, Yoshimoto N, Sasaki T, et al. J. Electron. Mater., 1992, 21(2):157-163.
［9］McIntosh F G, Boutros K S, Roberts J C, et al. Appl. Phys. Lett.,1996, 68(1):40-42.
［10］Lima A P, Miskys C R, Karrer U, et al. J. Crystal Growth, 2000, 220(4):341-344.
［11］胡国新，王晓亮，孙殿照, 等.半导体学报,2003, 24(6):602-605.
［12］Monroy E, Gogneau N, Enjalbert F, et al. Appl. Phys. Lett., 2003, 82(14):2242-2244.
［13］Oder T N, Li J, Lin J Y, et al. Appl. Phys. Lett., 2000, 77(6): 791-793.
［14］Franssen G, Grzanka S, Czernecki R, et al. J. Appl. Phys., 2005, 97(10):103507-1-6.
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